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PDF PSMN8R0-40PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN8R0-40PS | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN8R0-40PS
N-channel 40 V 7.6 mΩ standard level MOSFET
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
- - 40 V
- - 77 A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 86 W
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 20 V; see Figure 14;
see Figure 15
- 3.8 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 13
[1] -
6.2 7.6 mΩ
[1] Measured 3 mm from package.
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
NXP Semiconductors
PSMN8R0-40PS
N-channel 40 V 7.6 mΩ standard level MOSFET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 4
Min Typ Max Unit
- 1.2 1.74 K/W
10
Zth(j-mb)
(K/W)
1 δ = 0.5
0.2
0.1
10-1 0.05
0.02
10-2
003aad068
P δ = tp
T
10-3 single shot
tp
T
t
10-4
10-6
10-5
10-4
10-3
10-2
10-1 tp (s) 1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN8R0-40PS_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
5 of 14
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www.DataSheet.co.kr
NXP Semiconductors
PSMN8R0-40PS
N-channel 40 V 7.6 mΩ standard level MOSFET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
EA
p A1
q mounting
D1 base
D
L1(1)
b1(2)
L (3×)
b2(2)
(2×)
L2(1)
1 23
ee
b(3×)
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1(2) b2(2) c
D D1 E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7 1.40 0.9
4.1 1.25 0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
SOT78
3-lead TO-220AB
SC-46
Fig 18. Package outline SOT78 (TO-220AB)
ISSUE DATE
08-04-23
08-06-13
PSMN8R0-40PS_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
11 of 14
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