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PDF 2SC3354 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3354 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC3354 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistor
2SC3354
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
s Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q High transition frequency fT.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
3
50
300
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
Emitter to base voltage
VCBO
VEBO
IC = 100µA, IE = 0
IE = 10µA, IC = 0
30
3
V
V
Forward current transfer ratio
hFE
VCB = 10V, IE = –2mA
25 250
Base to emitter voltage
VBE VCB = 10V, IE = –2mA
720 mV
Common base reverse transfer capacitance Crb
VCE = 6V, IC = 0, f = 1MHz
0.8 pF
Common emitter reverse transfer capacitance Cre
Transition frequency
fT*
VCE = 10V, IC = 1mA, f = 10.7MHz
1 1.5 pF
VCB = 10V, IE = –15mA, f = 200MHz 600 1200 1600 MHz
Power gain
PG VCB = 10V, IE = –1mA, f = 100MHz
17
dB
*hFE Rank classification
Rank
T
S
fT(MHz) 600 ~ 1300 900 ~ 1600
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC3354.PDF ] | |
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