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PDF 2SC3356 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3356 | |
| Descripción | MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) | |
| Fabricantes | NEC | |
| Logotipo |  |
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 1. NPN ( Datasheet PDF )  Hay una vista previa y un enlace de descarga de 2SC3356 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
−0.15
2
13
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 100
Total Power Dissipation
PT
200
Junction Temperature
Tj
150
Storage Temperature
Tstg 65 to +150
V
V
V
mA
mW
C
C
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
1.0 A VCB = 10 V, IE = 0
1.0 A VEB = 1.0 V, IC = 0
DC Current Gain
hFE* 50 120 300
VCE = 10 V, IC = 20 mA
Gain Bandwidth Product
fT
7 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance
Insertion Power Gain
Cre**
S21e2
0.55
11.5
1.0
pF VCB = 10 V, IE = 0, f = 1.0 MHz
dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW 350 s, Duty Cycle 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
hFE Classification
Class
R23/Q *
R24/R *
R25/S *
Marking
R23
R24
R25
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
© 1985
1 page  
[MEMO]
2SC3356
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SC3356.PDF ] | |
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