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PDF SWD19N10 Data sheet ( Hoja de datos )
| Número de pieza | SWD19N10 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Samwin | |
| Logotipo |  |
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SAMWIN
SW19N10
N-channel MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 0.1Ω)@VGS=10V
■ Gate Charge (Typ 100nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220
TO-252
12
3
12
3
1. Gate 2. Drain 3. Source
General Description
This N-channel enhancement mode field-effect power transistor using SAMWIN
semiconductor’s advanced planar stripe, DMOS technology intended for battery
Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize RDS(ON), low gate charge and high rugged
avalanche characteristics.
BVDSS : 100V
ID : 17A
RDS(ON) : 0.1 ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW P 19N10
SW D 19N10
Marking
SW19N10
SW19N10
Package
TO-220
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
100
17
11
68
± 25
215
7.5
6.0
62.5
0.5
-55 ~ + 150
300
Thermal characteristics
Symbol
Parameter
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
Min. Typ. Max.
2.0
0.5
62.5
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
oC/W
oC/W
1/7
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
SAMWIN
SW19N10
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
1mA
VGS
VDS
DUT
VGS
QGS
QG
QGD
Charge
Fig. 13. Switching time test circuit & waveform
RG
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
10VIN
RG
L
IAS
VDS
DUT
VDD
BVDSS
IAS
EAS =
1
2 L X IAS2 X
BVDSS
BVDSS - VDD
ID(t)
tp
VDS(t)
time
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
5/7
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SWD19N10.PDF ] | |
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