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PDF SWD1N60 Data sheet ( Hoja de datos )
| Número de pieza | SWD1N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Samwin | |
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SAMWIN
SW1N60
N-channel MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 12 Ω)@VGS=10V
■ Gate Charge (Max 6nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-251
TO-252
TO-126
12 3
12
3
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 600V
ID : 1.0A
RDS(ON) : 12ohm
2
1
3
Order Codes
Item
1
2
3
Sales Type
SW L 1N60
SW I 1N60
SW D 1N60
Marking
SW1N60
SW1N60
SW1N60
Package
TO-126
TO-251
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
TO-126
1.0
0.65
4.0
30
0.23
Value
TO-251 TO-252
600
1.0
0.65
4.0
± 30
52
0.3
4.5
30
0.23
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
RthjC
RthCS
RthjA
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Maximum Value
TO-126
TO-251
TO-252
4.2
50
110
Unit
oC/W
oC/W
oC/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
SAMWIN
SW1N60
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
1mA
VGS
VDS
DUT
VGS
QGS
QG
QGD
Charge
Fig. 13. Switching time test circuit & waveform
RG
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
10VIN
RG
L
IAS
VDS
DUT
VDD
BVDSS
IAS
EAS =
1
2 L X IAS2 X
BVDSS
BVDSS - VDD
ID(t)
tp
VDS(t)
time
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
5/7
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SWD1N60.PDF ] | |
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