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부품번호 | FMV19N60E 기능 |
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기능 | N-CHANNEL SILICON POWER MOSFET | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 5 페이지수
www.DataSheet.co.kr
FMV19N60E
Super FAP-E3 series
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Outline Drawings [mm]
TO-220F(SLS)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
IDP
VGS
IAR
EAS
EAR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Isolation Voltage
Tch
Tstg
VISO
Characteristics
600
600
±19
±76
±30
19
799
13
6.5
100
2.16
130
150
-55 to + 150
2
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS (th)
IDSS
IGSS
RDS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Conditions
ID=250µA, VGS=0V
ID=250µA, VDS=VGS
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
ID=9.5A, VGS=10V
ID=9.5A, VDS=25V
VDS=25V
VGS = 0V
f=1MHz
Vcc = 30 0V
VGS=10V
ID = 9.5A
RGS=8.2Ω
Vcc = 30 0V
I D =19A
VGS=10V
L=1.71mH, Tch=25°C
IF=19A, VGS=0V, Tch=25°C
IF=19A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Tch =25°C
Tch =125°C
min.
600
2.5
-
-
-
-
13
-
-
-
-
-
-
-
-
-
-
19
-
-
-
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
kVrms
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
t = 60sec, f = 60Hz
typ.
-
3.0
-
-
10
0.31
26
3600
310
23
26
13
150
20
105
23
30
-
0.90
0.6
10
max.
-
3.5
25
250
100
0.365
-
5400
465
35
39
20
225
30
160
35
45
-
1.35
-
-
Unit
V
V
µA
nA
Ω
S
pF
ns
nC
A
V
µs
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=8A, L=22.9mH, Vcc=60V, RG=50Ω
EAS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Test Conditions
Channel to case
Channel to ambient
min.
typ.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=5.0kV/µs, Vcc≤BVDSS, Tch≤150°C.
1
max.
0.96
58.0
Unit
°C/W
°C/W
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
FMV19N60E
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=19A
800 IAS=19A
700
600
IAS=12A
500
400
IAS=8A
300
200
100
0
0 25 50 75 100 125
starting Tch [°C]
150
FUJI POWER MOSFET
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6 10-5 10-4 10-3 10-2 10-1 100
t [sec]
4
Datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
FMV19N60E | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
FMV19N60ES | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |