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FMW20N60S1HF 데이터시트 PDF




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부품번호 FMW20N60S1HF 기능
기능 N-CHANNEL SILICON POWER MOSFET
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FMW20N60S1HF 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
http://www.fujielectric.com/products/semiconductor/
FMW20N60S1HF
FUJI POWER MOSFET
Super J-MOS series
N-Channel enhancement mode power MOSFET
Features
Low on-state resistance
Low switching loss
easy to use (more controllabe switching dV/dt by Rg)
Outline Drawings [mm]
TO-247-P2
Applications
UPS
Server
Telecom
Power conditioner system
Power supply
CONNECTION
GATE
DRAIN
SOURCE DIMENSIONS ARE IN MILLIMETERS.
Maximum Ratings and Characteristics
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Symbol
VDS
VDSX
Continuous Drain Current
ID
Pulsed Drain Current
Gate-Source Voltage
IDP
VGS
Characteristics
600
600
±20
±12.6
±60
±30
Repetitive and Non-Repetitive Maximum Avalanche Current
IAR
6.6
Non-Repetitive Maximum Avalanche Energy
EAS
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
dVDS/dt
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, IAS=2A, L=216mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C.
Note *5 : IF≤-ID, dV/dt=15kV/μs, VDD≤400V, Tch≤150°C.
Tch
Tstg
472.2
50
15
100
2.5
140
150
-55 to +150
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Unit
V
V
A
A
A
V
A
mJ
kV/μs
kV/μs
A/μs
W
°C
°C
Remarks
VGS=-30V
Tc=25°C
Tc=100°C
Note*1
Note*1
Note *2
Note *3
VDS≤ 600V
Note *4
Note *5
Ta=25°C
Tc=25°C
1
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FMW20N60S1HF pdf, 반도체, 판매, 대치품
www.DataSheet.co.kr
FMW20N60S1HF
Drain-Source On-state Resistance
RDS(on)= f(Tch): ID=10A, VGS=10V
0.6
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Gate Threshold Voltage vs. Tch
VGS(th)= f(Tch): VDS=VGS, ID=250µA
6
0.5 5
0.4 4
0.3
max.
0.2
typ.
0.1
3
typ.
2
1
0.0
-50
-25
0
25 50 75
Tch [°C]
100 125
Typical Transfer Characteristic
ID= f(VGS): 80µs pulse test, VDS=25V
100
150
0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
Typical Transconductance
gfs= f(ID): 80µs pulse test, VDS=25V
100
10
1
150
Tch=25
0.1
0.01
Tch=25
10
150
1
1E-3
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Forward Characteristics of Reverse Diode
IF= f(VSD): 80µs pulse test
100
0.1
0.1
105
104
10
150
Tch=25
103
102
101
1
100
0.1 10-1
0.0 0.5 1.0 1.5 2.0 10-2
VSD [V]
4
1
ID [A]
10
Typical Capacitance
C= f(VDS): VGS=0V, f=1MHz
100
Ciss
Coss
Crss
10-1 100 101 102
VDS [V]
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FMW20N60S1HF 전자부품, 판매, 대치품
www.DataSheet.co.kr
FMW20N60S1HF
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of February 2012.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
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FMW20N60S1HF

N-CHANNEL SILICON POWER MOSFET

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