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PDF SQ1421EEH Data sheet ( Hoja de datos )
| Número de pieza | SQ1421EEH | |
| Descripción | Automotive P-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ1421EEH
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A)
Configuration
- 60
0.290
0.395
- 1.6
Single
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Typical ESD Protection: 800 V
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
(1, 2, 5, 6) D
D1
6D
D2
5D
G3
4S
Top View
Marking Code
9B XX
Lot Traceability
and Date Code
Part # Code
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
(3) G
SC-70
SQ1421EEH-T1-GE3
(4) S
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
TC = 25 °Ca
TC = 125 °C
VGS
ID
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 60
± 20
- 1.6
- 1.4
- 1.6
- 6.7
-8
3.2
3.3
1.1
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJF
LIMIT
125
45
UNIT
°C/W
S11-2128 Rev. B, 31-Oct-11
1
Document Number: 67057
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
- 60
ID = 1 mA
- 64
SQ1421EEH
Vishay Siliconix
- 68
- 72
- 76
- 80
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
100
10
ID Limited
IDM Limited
Limited by RDS(on)*
1
100 μs
1 ms
0.1
0.01
0.01
TC = 25 °C
Single Pulse
0.1
1
10 ms
100 ms
1 s,10 s, DC
BVDSS Limited
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S11-2128 Rev. B, 31-Oct-11
5
Document Number: 67057
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
Return to Index
Return to Index
0.016
(0.406)
0.026
(0.648)
0.010
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
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