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기능 Automotive N-Channel MOSFET
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SQ1470EH 데이터시트, 핀배열, 회로
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SQ1470EH
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 4.5 V
RDS(on) () at VGS = 2.5 V
ID (A)
Configuration
30
0.065
0.095
2.8
Single
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
9C XX
Lot Traceability
and Date Code
Part # Code
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SC-70
SQ1470EH-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
30
± 12
2.8
2.8
2.8
11
10
5
3.3
1.1
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJF
LIMIT
125
45
UNIT
°C/W
S11-2128 Rev. C, 31-Oct-11
1
Document Number: 67059
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




SQ1470EH pdf, 반도체, 판매, 대치품
www.DataSheet.co.kr
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.5 100
SQ1470EH
Vishay Siliconix
0.2
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 μA
10
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
- 1.0
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
0.24
0.18
0.12
0.06
TJ = 150 °C
TJ = 25 °C
0.00
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
40
ID = 1 mA
38
36
34
32
30
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
2.0
ID = 3.8 A
1.7
1.4
1.1
VGS = 4.5 V
VGS = 2.5 V
0.8
0.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
IDM Limited
10
Limited by RDS(on)*
100 μs
1 1 ms
ID Limited
10 ms
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
100 ms
1s, 10 s, DC
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
S11-2128 Rev. C, 31-Oct-11
4
Document Number: 67059
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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SQ1470EH 전자부품, 판매, 대치품
www.DataSheet.co.kr
AN815
Vishay Siliconix
Single-Channel LITTLE FOOTR SC-70 6-Pin MOSFET
Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance
INTRODUCTION
The new single 6-pin SC-70 package with a copper leadframe
enables improved on-resistance values and enhanced
thermal performance as compared to the existing 3-pin and
6-pin packages with Alloy 42 leadframes. These devices are
intended for small to medium load applications where a
miniaturized package is required. Devices in this package
come in a range of on-resistance values, in n-channel and
p-channel versions. This technical note discusses pin-outs,
package outlines, pad patterns, evaluation board layout, and
thermal performance for the single-channel version.
BASIC PAD PATTERNS
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286) for the basic
pad layout and dimensions. These pad patterns are sufficient
for the low to medium power applications for which this
package is intended. Increasing the drain pad pattern yields a
reduction in thermal resistance and is a preferred footprint.
The availability of four drain leads rather than the traditional
single drain lead allows a better thermal path from the package
to the PCB and external environment.
PIN-OUT
Figure 1 shows the pin-out description and Pin 1
identification.The pin-out of this device allows the use of four
pins as drain leads, which helps to reduce on-resistance and
junction-to-ambient thermal resistance.
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
FIGURE 1.
For package dimensions see outline drawing SC-70 (6-Leads)
(http://www.vishay.com/doc?71154)
Document Number: 71334
12-Dec-03
EVALUATION BOARDS Ċ SINGLE SC70-6
The evaluation board (EVB) measures 0.6 inches by
0.5 inches. The copper pad traces are the same as in Figure 2.
The board allows examination from the outer pins to 6-pin DIP
connections, permitting test sockets to be used in evaluation
testing. See Figure 3.
52 (mil)
96 (mil)
71 (mil)
654
1 2 3 26 (mil)
13 (mil)
0, 0 (mil)
18 (mil)
26 (mil)
16 (mil)
FIGURE 2. SC-70 (6 leads) Single
The thermal performance of the single 6-pin SC-70 has been
measured on the EVB, comparing both the copper and
Alloy 42 leadframes. This test was first conducted on the
traditional Alloy 42 leadframe and was then repeated using the
1-inch2 PCB with dual-side copper coating.
www.vishay.com
1
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부품번호상세설명 및 기능제조사
SQ1470EH

Automotive N-Channel MOSFET

Vishay
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