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PDF SQ2361EES Data sheet ( Hoja de datos )
| Número de pieza | SQ2361EES | |
| Descripción | Automotive P-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ2361EES
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A)
TO-236
(SOT-23)
- 60
0.150
0.200
- 2.5
S
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Typical ESD Protection: 800 V
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
G1
S2
3D
G
Top View
SQ2361EES
Marking Code: 8Nxxx
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D
P-Channel MOSFET
SOT-23
SQ2361EES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
IS
Pulsed Drain Currenta
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 60
± 20
- 2.5
- 1.4
- 2.5
- 10
- 15
11
2
0.67
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
175
75
UNIT
°C/W
S11-2111-Rev. B, 07-Nov-11
1
Document Number: 70953
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
www.vishay.com
SQ2361EES
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
- 60
ID = 1 mA
- 64
- 68
- 72
- 76
- 80
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
10
Limited by RDS(on)*
1
IDM Limited
100 μs
1 ms
0.1 10 ms
TC = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s,
10 s, DC
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 175 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2111-Rev. B, 07-Nov-11
5
Document Number: 70953
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SQ2361EES.PDF ] | |
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