|
|
PDF SQ7415EN Data sheet ( Hoja de datos )
| Número de pieza | SQ7415EN | |
| Descripción | Automotive P-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SQ7415EN (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
www.DataSheet.co.kr
SQ7415EN
Vishay Siliconix
Automotive
P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
ID (A)
Configuration
PowerPAK 1212-8
- 60
0.065
- 5.7
Single
S
FEATURES
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
AEC-Q101 RELIABILITY
• Passed all AEC-Q101 Reliability Testing
Pb-free
Available
RoHS*
COMPLIANT
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
PowerPAK 1212-8
SQ7415EN-T1-E3
SQ7415EN-T1
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C
TC = 70 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
L = 0.1 mH
EAS
IAS
Maximum Power Dissipationb
TC = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 60
± 20
- 3.6a
- 2.9a
- 1.3a
- 30
-
-
1.5
0.8
- 55 to + 175
UNIT
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
81
2.4
UNIT
°C/W
Document Number: 74488
S-81558-Rev. B, 01-Jul-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
SQ7415EN
Vishay Siliconix
THERMAL RATINGS TA = 25 °C, unless otherwise noted
120
100
80 Graph to be available
60 upon completion
of testing
40
20
0
0 25 50 75 100 125 150 175
TC - Ambient Temperature (°C)
Maximum Drain Current vs. Ambient Temperature
50
40
30
20
10
0
0.01
0.1
1 10
Time (s)
100 600
Single Pulse Power, Junction-to-Ambient
1000
1000
100
Graph to be available
upon completion
10 of testing
1
0.1
0.00001
0.8
0.0001 0.001 0.01
0.1
TAV (s)
Avalanche Current vs. Time
0.6 ID = 250 µA
1
0.4
0.2
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
Document Number: 74488
S-81558-Rev. B, 01-Jul-08
100
Graph to be available
upon completion
10
of testing
1
0.1
0.1
* VGS
1 10 100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SQ7415EN.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SQ7415EN | Automotive P-Channel MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |