2SC3606 Datasheet PDF - Toshiba Semiconductor
| Part Number | 2SC3606 | |
| Description | Silicon NPN Epitaxial Planar Type Transistor | |
| Manufacturers | Toshiba Semiconductor | |
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There is a preview and 2SC3606 download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3606
2SC3606
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
20
12
3
80
40
150
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA, f = 500 MHz
VCE = 10 V, IC = 20 mA, f = 1 GHz
VCE = 10 V, IC = 5 mA, f = 500 MHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
5 7 ¾ GHz
¾ 16.5
7.5 11
¾
¾
dB
¾1¾
dB
¾ 1.1
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note)
¾
¾
30
¾
¾
¾ 1 mA
¾ 1 mA
¾ 250
1.0 ¾ pF
0.7 1.15 pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
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2SC3606
5 2003-03-19
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SC3606 electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2SC3606.PDF Datasheet ] | |
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