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Datasheet RU2YX Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RU2YX | Fast-Recovery Rectifier Diodes Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR (µA) IR (H) (µA)
Others
Tj (°C)
t rr (µs)
IF /IRP (mA)
t rr (µs)
IF /I | Sanken electric | rectifier |
2 | RU2YX | Fast-Recovery Rectifier Diodes Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR (µA) IR (H) (µA)
Others
Tj (°C)
t rr (µs)
IF /IRP (mA)
t rr (µs)
IF /I | Sanken electric | rectifier |
3 | RU2YX | FAST RECOVERY RECTIFIER DIODE RU2YX
PRV : 100 Volts Io : 1.5 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
FAST RECOVERY RECTIFIER DIODE
D2
0.161 (4.1) 0.154 (3.9)
1.00 (25.4) MIN.
0.284 (7. | EIC discrete Semiconductors | rectifier |
4 | RU2YX | Plastic Ultra-Fast Recover Rectifier SIYU R
塑封超快速整流二极管
反向电压 100V 正向电流 1.5 A
DO-15L
RU2YX
Plastic Ultra-Fast Recover Rectifier
Reverse Voltage 100V Forward Current 1.5 A 特征 Features
·反向漏电流低 Low reverse leakage High forward surge capability ·正向浪涌承受能力较强
25.4
0.8� | SIYU | rectifier |
RU2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RU2 | Silicon And Fast Recovery Rectifiers RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified sine-wave
Voltage Current Superimposed
Maximum Forward Voltage
Maximum
DC
Reverse
Current TA=25 OC
Typical Reverse Recovery
Time
Package Style
T WEJ rectifier | | |
2 | RU2 | Fast-Recovery Rectifier Diodes Sanken electric rectifier | | |
3 | RU2 | FAST RECOVERY RECTIFIER DIODES RU2 - RU2Z
PRV : 200 - 800 Volts Io : 1.0 Ampere
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
FAST RECOVERY RECTIFIER DIODES
D2
0.161 (4.1) 0.154 (3.9)
1.00 (25.4) MIN. EIC discrete Semiconductors rectifier | | |
4 | RU20120L | N-Channel Advanced Power MOSFET RU20120L
N-Channel Advanced Power MOSFET
Features
• 20V/120A,
RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Complian Ruichips mosfet | | |
5 | RU20130L | N-Channel Advanced Power MOSFET RU20130L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/130A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO Ruichips mosfet | | |
6 | RU2013H | N-Channel Advanced Power MOSFET RU2013H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/13A, RDS (ON) =13mΩ (Typ.) @ VGS=10V RDS (ON) =16mΩ (Typ.) @ VGS=4.5V RDS (ON) =22mΩ (Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Low On-Resistance
• Reliable and Rugged
• Lead Free and Green Available
Pin Descript Ruichips mosfet | | |
7 | RU2020H | N-Channel Advanced Power MOSFET RU2020H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/20A, RDS (ON) =3.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.8mΩ (Typ.) @ VGS=4.5V RDS (ON) =5.6mΩ (Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Low RDS(ON)
• Reliable and Rugged
• Lead Free and Green Available
Pin Description Ruichips mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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