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PDF 2SC3810 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3810 | |
| Descripción | NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON TRANSISTOR
2SC3810
NPN SILICON EPITAXIAL TRANSISTOR
FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS
INDUSTRIAL USE
FEATURES
• The 2SC3810 is an NPN silicon epitaxial dual transistor having
a large-gain-bandwidth product performance in a wide operating
current range.
• Dual chips in one package can achieve high performance for
differential amplifiers and current mode logic (CML) circuits.
PACKAGE DIMENSIONS (in millimeters)
5.0 MIN.
3
3.5+0.3
-0.2
5.0 MIN.
2
4
5
1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Thermal Resistance (junction to case)
Junction Temperature
Storage Temperature
SYMBOL RATINGS
VCBO
20
VCEO
10
VEBO
1.5
IC 65/unit
PT 240/unit
Rth (j-c)
90/unit
Tj 200
Tstg -65 to +200
UNIT
V
V
V
mA
mW
°C/W
°C
°C
0.6 ± 0.1
(#492C)
PIN CONNECTIONS
32
C1 C2
41
B1 B2
5
E
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Collector to Base Breakdown Voltage
Emitter to Base Breakdown Voltage
BVCBO
BVEBO
IC = 10 µA
IE = 10 µA, IC = 0
20 V
1.5 V
Collector to Emitter Breakdown Voltage BVCEO IC = 1 mA, RBE = ∞
10 V
Collector Cut-off Current
ICBO VCB = 10 V, IE = 0
1.0 µA
Emitter Cut-off Current
IEBO VEB = 1 V, IC = 0
1.0 µA
DC Current Gain
hFE VCE = 8 V, IC = 20 mA
50 100 250
hFE Ratio
hFE1/hFE2 Note 1 VCE = 8 V, IC = 20 mA
Difference of Base to Emitter Voltage
∆ VBE VCE = 8 V, IC = 20 mA
0.6 1.0
30 mV
Gain Bandwidth Product
fT Note 2 VCE = 8 V, IC = 20 mA
78
GHz
Feedback Capacitance
Cre Note 3 VCB = 10 V, IE = 0, f = 1.0 MHz
0.5 1.0 pF
Notes 1. hFE1 is the smaller hFE value of the 2 transistors.
2. Measured using a single-type device (equivalent to the 2SC3604).
3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should be connected to
the guard terminal of the bridge.
Document No. P11698EJ1V0DS00 (1st edition)
Date Published July 1996 P
Printed in Japan
© 1996
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC3810.PDF ] | |
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