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부품번호 | R6012FNX 기능 |
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기능 | Drive Nch MOSFET | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 7 페이지수
Data Sheet
10V Drive Nch MOSFET
R6012FNX
Structure
Silicon N-channel MOSFET
Features
1) Fast reverse recovery time (trr)
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
VGSS garanteed to be ±30V .
5) Drive circuits can be simple.
6) Parallel use is easy.
Dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
Application
Switching
Inner circuit
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
R6012FNX
Bulk
-
500
www.DataSheet.co.kr
Absolute maximum ratings (Ta 25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25C)
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD
Tch
Tstg
600
30
12
48
12
48
6
9.6
50
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 L≒500H, VDD=50V, Rg=25,starting Tch=25°C
*3 Limited only by maximum temperature allowed.
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
C / W
(1) Gate
(2) Drain
(3) Source
∗1
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
R6012FNX
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
VDS=10V
pulsed
10
1
0.1
0.01
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.001
0.001
0.01
0.1 1
Drain Current : ID [A]
10
100
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
1
Ta=25°C
Pulsed
0.8
0.6
ID=12A
0.4
ID=6A
0.2
0
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.11 Dynamic Input Characteristics
12
Ta=25°C
VDD=300V
10 ID=12A
Pulsed
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Total Gate Charge : Qg [nC]
Fig.8 Source Current vs. Source-Drain Voltage
100
VGS=0V
pulsed
10 Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
0.0
10000
1000
100
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10
0.5 1.0
Source-Drain Voltage : VSD [V]
1.5
Fig.10 Switching Characteristics
tf
td(on)
VDD≒300V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
td(off)
tr
1
0.01
0.1 1
Drain Current : ID [A]
10
100
Fig.12 Typical Capacitance vs. Drain-Source Voltage
100000
10000
Ta=25°C
f=1MHz
VGS=0V
1000
Ciss
100
10
Coss
Crss
1
0.01
0.1 1 10 100
Drain-Source Voltage : VDS [V]
1000
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 Notes
Notice
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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
Datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
R6012FNX | Drive Nch MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |