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부품번호 | R6020ANJ 기능 |
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기능 | Drive Nch MOSFET | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 6 페이지수
10V Drive Nch MOSFET
R6020ANJ
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zApplications
Switching
zPackaging specifications
<LPTS>
Package
Type Code
Basic ordering unit (pieces)
R6020ANJ
Taping
TL
1000
<LPTL>
Package
Type Code
Basic ordering unit (pieces)
R6020ANJ
Taping
TLL
1000
www.DataSheet.co.kr
zDimensions (Unit : mm)
LPTS
10.1
4.5 1.3
1.24
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
LPTL
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Each lead has same dimensions
8.9
4.8
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
(1) (2) (3)
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
600
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDP
IS
ISP
∗3
∗1
∗3
∗1
±30
±20
±80
20
80
Avalanche Current
IAS ∗2
10
Avalanche Energy
EAS ∗2
26.7
Total power dissipation (Tc=25°C)
PD
100
Channel temperature
Tch 150
Range of storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed
−55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
1.25
Unit
°C/W
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/5
zInner circuit
∗1
(1)
(1) Gate
(2) Drain
(3) Source
(2) (3)
∗1 Body Diode
2009.06 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
R6020ANJ
Data Sheet
10 1000
5
Ta= 25°C
VDD= 300V
ID= 20A
RG= 10
0 Pulsed
0 10 20 30 40 50 60
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input Characteristics
10
Ta = 25°C
Single Pulse : 1Unit
1 Rth ch-a t = t ×Rth ch-a
Rth ch-a = 62.5°C/W
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
100
10
0.1
Ta= 25°C
di / dt= 100A / µs
VGS= 0V
Pulsed
1 10 100
REVERSE DRAIN CURRENT : IDR (A)
Fig.11 Reverse Recovery Time
vs.Reverse Drain Current
10 100 1000
PULSE WIDTH : Pw(s)
Fig.13 Normalized Transient Thermal Resistance vs. Pulse Width
10000
1000
100
td(off)
Ta= 25°C RG= 10Ω
tf VGS= 10V Pulsed
VDD= 300V
10
tr
td(on)
1
0.01
0.1
1
10 100
DRAIN CURRENT : ID (A)
Fig.12 Switching Characteristics
zMeasurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching time measurement circuit
VGS
IG(Const.)
RG
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate charge measurement circuit
www.DataSheet.co.kr
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate charge waveform
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
4/5
2009.06 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
R6020ANJ | Drive Nch MOSFET | ROHM Semiconductor |
R6020ANX | Drive Nch MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |