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부품번호 | RCD040N25 기능 |
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기능 | Drive Nch MOSFET | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 7 페이지수
Data Sheet
10V Drive Nch MOSFET
RCD040N25
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.9 2.3
(1) (2)
0.65
(3) 2.3
0.5
1.0
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RCD040N25
Taping
TL
2500
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Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
250
VGSS
30
ID *3
4
IDP *1,3
IS
16
4
ISP *1
16
IAS *2
2
EAS *2
1.61
PD *4
20
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25C
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)*
* TC=25°C
* Limited only by maximum channel temperature allowed.
Limits
6.25
Unit
C / W
Inner circuit
∗1
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
RCD040N25
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
10
VDS=10V
pulsed
1
Ta= 125°C
Ta= 75°C
0.1 Ta= 25°C
Ta= -25°C
Fig.8 Source Current vs. Source-Drain Voltage
10
VGS=0V
pulsed
Ta= 125°C
1 Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
0.01
0.1 1
Drain Current : ID [A]
10
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
2400
2200
2000
Ta=25°C
pulsed
1800
1600
1400
1200
1000
800
ID=2.0A
ID=4.0A
600
400
200
0
0246
8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.11 Dynamic Input Characteristics
15
Ta=25°C
VDD=125V
ID=4A
Pulsed
10
5
0
0 5 10 15
Total Gate Charge : Qg [nC]
0.01
0.0
0.5 1.0
Source-Drain Voltage : VSD [V]
1.5
10000
1000
100
Fig.10 Switching Characteristics
td(off)
tf
VDD≒125V
VGS=10V
RG=10W
Ta=25°C
Pulsed
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10
1
0.01
td(on)
tr
0.1 1
Drain Current : ID [A]
10
1000
Fig.12 Typical Capacitance vs. Drain-Source Voltage
100
Ciss
Coss
10
Ta=25°C
Crss
f=1MHz
VGS=0V
1
0.01
0.1
1
10 100 1000
Drain-Source Voltage : VDS [V]
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© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 Notes
Notice
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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
Datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
RCD040N25 | Drive Nch MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |