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Número de pieza | RCJ450N20 | |
Descripción | Drive Nch MOSFET | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RCJ450N20 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
10V Drive Nch MOSFET
RCJ450N20
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RCJ450N20
Taping
TL
1000
www.DataSheet.co.kr
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD *4
Tch
Range of storage temperature
Tstg
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum temperature allowed.
*4 TC=25C
Limits
200
30
45
180
45
180
22.5
160
40
150
55 to 150
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
* TC=25°C
* Limited only by maximum temperature allowed.
Symbol
Rth (ch-c)*
Limits
3.12
Unit
C / W
Inner circuit
∗1
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page RCJ450N20
Data Sheet
Fig.13 Reverse Recovery Time vs. Source Current
1000
Ta=25°C
Vgs=0V
di/dt=100A/us
Pulsed
100
10
0
1 10
Source Current : IS [A]
100
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse
1
0.1
0.01
0.001
0.0001
0.0001 0.001
Rth(ch-a)=34.1°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01 0.1
1
10 100 1000
Pulse width : Pw (s)
1000
Fig.14 Maximum Safe Operating Area
100
10
Operation in this area
is limited by RDS(on)
1 (VGS = 10V)
PW = 100μs
PW = 1ms
PW = 10ms
0.1
Ta=25°C
Single Pulse
0.01
0.1
1
10 100
Drain-Source Voltage : VDS [ V ]
1000
www.DataSheet.co.kr
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
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RCJ450N20 | Drive Nch MOSFET | ROHM Semiconductor |
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