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부품번호 | 2SC3951 기능 |
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기능 | PNP/NPN Epitaxial Planar Silicon Transistors | ||
제조업체 | Sanyo Semicon Device | ||
로고 | |||
전체 4 페이지수
Ordering number:EN2435A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1536/2SC3951
High-Definition CRT Display
Video Output Applications
Applications
· High definition CRT display video output, wide-band
amplifier.
Features
· High fT : fT=600MHz.
· High breakdown voltage : VCEO=70Vmin.
· Small reverse transfer capacitance and excellent high
-frequency characteristic :
Cre=1.9pF/NPN, 2.4pF/PNP.
· Complementary PNP and NPN types.
· Adoption of FBET process.
· Micaless type.
( ) : 2SA1536
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Package Dimensions
unit:mm
2042A
[2SA1536/2SC3951]
Conditions
B : Base
C : Collector
E : Emitter
SANYO : TO-126ML
Ratings
(–)80
(–)70
(–)3
(–)300
(–)600
1.3
8
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)60V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)50mA
VCE=(–)10V, IC=(–)200mA
VCE=(–)10V, IC=(–)100mA
VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)30V, f=1MHz
Collector-to-Emitter Saturation Voltage
Emitter-to-Base Saturation Voltage
VCE(sat) IC=(–)50mA, IB=(–)5mA
VBE(sat) IC=(–)50mA, IB=(–)5mA
*hFE1 : The 2SA1536/2SC3951 are classified by 50mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
Ratings
min typ
40*
20
600
2.4
(3.1)
1.9
(2.4)
max
(–)0.1
(–)1.0
320*
(–)1.0
(–)1.0
Unit
µA
µA
MHz
pF
pF
pF
pF
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72098HA (KT)/9149MO/2247TA, TS No.2435-1/4
2SA1536/2SC3951
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1998. Specifications and information herein are subject to
change without notice.
PS No.2435-4/4
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부품번호 | 상세설명 및 기능 | 제조사 |
2SC3950 | PNP/NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
2SC3951 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |