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부품번호 | L3713S 기능 |
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기능 | IRL3713S | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 11 페이지수
PD - 94184C
SMPS MOSFET
IRL3713
IRL3713S
IRL3713L
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max (mΩ) ID
3.0@VGS = 10V
260A
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3713
D2Pak
IRL3713S
TO-262
IRL3713L
Absolute Maximum Ratings
Symbol
Parameter
www.DataSheet.co.kr
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
TJ , TSTG
Junction and Storage Temperature Range
Max.
30
± 20
260
180
1040
330
170
2.2
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
0.50
–––
–––
Max.
0.45
–––
62
40
Units
°C/W
Notes through are on page 11
www.irf.com
1
01/02/02
Datasheet pdf - http://www.DataSheet4U.net/
IRL3713/S/L
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14 ID = 30A
12
10
8
6
4
VDS = 24V
VDS = 15V
VDS = 6V
100
1
10
VDS, Drain-to-Source Voltage (V)
100
2
0
0 40 80 120 160
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
www.DataSheet.co.kr
1000
100 TJ = 175° C
10
TJ = 25° C
1
0.1
0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
VSD ,Source-to-Drain Voltage (V)
1.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
10us
100us
100
1ms
TC = 25 °C
T J = 175 °C
10ms
Single Pulse
10
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
www.irf.com
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 IRL3713/S/L
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
www.DataSheet.co.kr
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
Datasheet pdf - http://www.DataSheet4U.net/
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ L3713S.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
L3713S | IRL3713S | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |