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AD5110 데이터시트 PDF




Analog Devices에서 제조한 전자 부품 AD5110은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 AD5110 기능
기능 (AD5110 - AD5114) Nonvolatile Digital Potentiometer
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AD5110 데이터시트, 핀배열, 회로
Data Sheet
Single-Channel, 128-/64-/32-Position, I2C, ±8%
Resistor Tolerance, Nonvolatile Digital Potentiometer
AD5110/AD5112/AD5114
FEATURES
Single-channel, 128-/64-/32-position resolution
5 kΩ, 10 kΩ, 80 kΩ nominal resistance
Maximum ±8% nominal resistor tolerance error
Low wiper resistance
±6 mA maximum wiper current density
Resistor tolerance stored in EEPROM (0.1% accuracy)
Rheostat mode temperature coefficient: 35 ppm/°C
Potentiometer mode temperature coefficient: 5 ppm/°C
2.3 V to 5.5 V single-supply operation
1.8 V to 5.5 V logic supply operation
Power-on EEPROM refresh time < 50 μs
I2C-compatible interface
Wiper setting and EEPROM readback
50-year typical data retention at 125°C
1 million write cycles
Wide operating temperature: −40°C to +125°C
Thin, 2 mm × 2 mm × 0.55 mm 8-lead LFCSP package
APPLICATIONS
Mechanical potentiometer replacement
Portable electronics level adjustment
Audio volume control
Low resolution DAC
LCD panel brightness and contrast control
Programmable voltage to current conversion
Programmable filters, delays, time constants
Feedback resistor programmable power supply
Sensor calibration
GENERAL DESCRIPTION
The AD5110/AD5112/AD5114 provide a nonvolatile solution
for 128-/64-/32-position adjustment applications, offering
guaranteed low resistor tolerance errors of ±8% and up to
±6 mA current density in the A, B, and W pins. The low resistor
tolerance, low nominal temperature coefficient and high
bandwidth simplify open-loop applications, as well as tolerance
matching applications.
The new low wiper resistance feature minimizes the wiper
resistance in the extremes of the resistor array to only 45 Ω,
typical.
The wiper settings are controllable through an I2C-compatible
digital interface that is also used to readback the wiper register
and EEPROM content. Resistor tolerance is stored within
EEPROM, providing an end-to-end tolerance accuracy of 0.1%.
FUNCTIONAL BLOCK DIAGRAM
VLOGIC
VDD
SDA
SCL
POWER-ON
RESET
AD5110/AD5112/AD5114
A
DATA
I2C
SERIAL
INTERFACE
DATA
EEPROM
RDAC
REGISTER
W
B
GND
Figure 1.
www.DataSheet.co.kr
The AD5110/AD5112/AD5114 are available in a 2 mm × 2 mm
LFCSP package. The parts are guaranteed to operate over the
extended industrial temperature range of −40°C to +125°C.
Table 1. ±8% Resistance Tolerance Family
Model Resistance (kΩ) Position
AD5110 10, 80
128
AD5111 10, 80
128
AD5112 5, 10, 80
64
AD5113 5, 10, 80
64
AD5116 5, 10, 80
64
AD5114 10, 80
32
AD5115 10, 80
32
Interface
I2C
Up/down
I2C
Up/down
Push-button
I2C
Up/down
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2011 Analog Devices, Inc. All rights reserved.
Datasheet pdf - http://www.DataSheet4U.net/




AD5110 pdf, 반도체, 판매, 대치품
AD5110/AD5112/AD5114
Data Sheet
Parameter
POWER SUPPLIES
Single-Supply Power Range
Logic Supply Range
Positive Supply Current
EEMEM Store Current3, 6
EEMEM Read Current3, 7
Logic Supply Current
Power Dissipation8
Power Supply Rejection3
DYNAMIC CHARACTERISTICS3, 9
Bandwidth
Total Harmonic Distortion
VW Settling Time
Resistor Noise Density
FLASH/EE MEMORY RELIABILITY3
Endurance10
Data Retention11
Symbol
IDD
IDD_NVM_STORE
IDD_NVM_READ
ILOGIC
PDISS
PSR
BW
THD
ts
eN_WB
Test Conditions/Comments
VDD = 5 V
Min
2.3
1.8
VIH = VLOGIC or VIL = GND
VIH = VLOGIC or VIL = GND
∆VDD/∆VSS = 5 V ± 10%
RAB = 10 kΩ
RAB = 80 kΩ
Code = half scale, −3 dB
RAB = 10 kΩ
RAB = 80 kΩ
VA = VDD/2 +1 V rms, VB = VDD/2,
f = 1 kHz, code = half scale
RAB = 10 kΩ
RAB = 80 kΩ
VA = 5 V, VB = 0 V,
±0.5 LSB error band
RAB = 10 kΩ
RAB = 80 kΩ
Code = half scale, TA = 25°C,
f = 100 kHz
RAB = 10 kΩ
RAB = 80 kΩ
www.DataSheet.co.kr
TA = 25°C
100
Typ1 Max
5.5
VDD
750
2
320
30
5
−50
−64
2
200
−80
−85
3
12
9
20
1
50
Unit
V
V
nA
mA
μA
nA
μW
dB
dB
MHz
kHz
dB
dB
μs
μs
nV/√Hz
nV/√Hz
MCycles
kCycles
Years
1 Typical values represent average readings at 25°C, VDD = 5 V, VSS = 0 V, and VLOGIC = 5 V.
2 Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. The maximum wiper current is limited to 0.75 × VDD/RAB.
3 Guaranteed by design and characterization, not subject to production test.
4 INL and DNL are measured at VWB with the RDAC configured as a potentiometer divider similar to a voltage output DAC. VA = VDD and VB = 0 V. DNL specification limits
of ±1 LSB maximum are guaranteed monotonic operating conditions.
5 Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on polarity with respect to each other.
6 Different from operating current; supply current for NVM program lasts approximately 30 ms.
7 Different from operating current; supply current for NVM read lasts approximately 20 μs.
8 PDISS is calculated from (IDD × VDD) + (ILOGIC × VLOGIC).
9 All dynamic characteristics use VDD = 5.5 V, and VLOGIC = 5 V.
10 Endurance is qualified at 100,000 cycles per JEDEC Standard 22, Method A117 and measured at 150°C.
11 Retention lifetime equivalent at junction temperature (TJ) = 125°C per JEDEC Standard 22, Method A117. Retention lifetime based on an activation energy of 1 eV
derates with junction temperature in the Flash/EE memory.
Rev. 0 | Page 4 of 28
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AD5110 전자부품, 판매, 대치품
Data Sheet
AD5110/AD5112/AD5114
ELECTRICAL CHARACTERISTICS—AD5114
10 kΩ and 80 kΩ versions: VDD = 2.3 V to 5.5 V, VLOGIC = 1.8 V to VDD, VA = VDD, VB = 0 V, −40°C < TA < +125°C, unless otherwise noted.
Table 4.
Parameter
DC CHARACTERISTICS—RHEOSTAT MODE
Resolution
Resistor Integral Nonlinearity2
Resistor Differential Nonlinearity2
Nominal Resistor Tolerance
Resistance Temperature Coefficient3
Wiper Resistance
DC CHARACTERISTICS—POTENTIOMETER
DIVIDER MODE
Integral Nonlinearity4
Differential Nonlinearity4
Full-Scale Error
Symbol
N
R-INL
R-DNL
ΔRAB/RAB
(ΔRAB/RAB)/ΔT × 106
RW
RBS
RTS
INL
DNL
VWFSE
Zero-Scale Error
VWZSE
Voltage Divider Temperature Coefficient3
RESISTOR TERMINALS
Maximum Continuous IA, IB, and IW
Current3
Terminal Voltage Range5
Capacitance A, Capacitance B3
(ΔVW/VW)/ΔT × 106
CA, CB
Capacitance W3
CW
Common-Mode Leakage Current3
DIGITAL INPUTS
Input Logic3
High
Low
Input Hysteresis3
Input Current3
Input Capacitance3
DIGITAL OUTPUT (SDA)
Output Low Voltage3
Three-State Leakage Current
Three-State Output Capacitance3
VINH
VINL
VHYST
IN
CIN
VOL
Test Conditions/Comments
Code = full scale
Code = zero scale
Code = bottom scale
Code = top scale
RAB = 10 kΩ
RAB = 80 kΩ
RAB = 10 kΩ
RAB = 80 kΩ
Code = half scale
RAB = 10 kΩ
RAB = 80 kΩ
f = 1 MHz, measured to GND,
code = half scale, V = V =www.DataSheet.co.kr
WA
2.5 V or VW = VB = 2.5 V
f = 1 MHz, measured to
GND, code = half scale, VA =
VB = 2.5 V
VA = VW = VB
VLOGIC = 1.8 V to 2.3 V
VLOGIC = 2.3 V to 5.5 V
VLOGIC = 1.8 V to 2.3 V
VLOGIC = 2.3 V to 5.5 V
ISINK = 3 mA
ISINK = 6 mA
Min
5
−0.5
−0.25
−8
−0.25
−0.25
−1
−0.5
−6
−1.5
GND
−500
Typ1 Max
+0.5
+0.25
+8
35
70 140
45 80
70 140
+0.25
+0.25
1
0.25
±10
+6
+1.5
VDD
20
35
±15 +500
Unit
Bits
LSB
LSB
%
ppm/°C
Ω
Ω
Ω
LSB
LSB
LSB
LSB
LSB
LSB
ppm/°C
mA
mA
V
pF
pF
nA
0.8 × VLOGIC
0.7 × VLOGIC
0.1 × VLOGIC
5
−1
2
0.2 × VLOGIC
0.3 × VLOGIC
±1
V
V
V
V
V
μA
pF
0.2 V
0.4 V
+1 μA
pF
Rev. 0 | Page 7 of 28
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