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부품번호 | OC1005 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
OC1005
N-channel TrenchMOS standard level FET
Rev. 02 — 10 December 2007
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
I Standard level threshold
I Very low on-state resistance
1.3 Applications
I Motors, lamps, solenoids
I DC-to-DC converters
I Uninterrupted power supplies
I General industrial applications.
1.4 Quick reference data
I VDS ≤ 55 V
I Ptot ≤ 200 W
2. Pinning information
I ID ≤ 110 A
I RDSon ≤ 7.1 mΩ
www.DataSheet.co.kr
Table 1.
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base;
connected to drain
Simplified outline Symbol
mb D
G
mbb076 S
123
SOT78 (TO-220AB)
Datasheet pdf - http://www.DataSheet4U.net/
NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4
Rth(j-a) thermal resistance from junction to ambient
vertical in free air
Min Typ Max Unit
- - 0.75 K/W
- 60 - K/W
003aab893
1
Zth(j-mb) δ = 0.5
(K/W)
0.2
10−1
0.1
0.01
0.02
single pulse
P
tp
δ=
T
10−2
10−4
10−3
10−2
10−1
tp
T
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mountingwww.DataSheet.co.kr base as a function of pulse duration
OC1005_2
Product data sheet
Rev. 02 — 10 December 2007
© NXP B.V. 2007. All rights reserved.
4 of 12
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
3
2
1
003aab852
max
typ
min
10−1
ID
(A)
10−2
10−3
10−4
10−5
003aab853
min typ max
0
−60
0
60 120 160
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
10−6
0246
VGS (V)
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
10
VGS
(V)
8
ID = 25 A
Tj = 25 °C
6 14 V
003aab911
VDS = 44 V
4
2
0
0 20 40 60
QG (nC)
ID = 25 A; VDS = 14 V and 44 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
www.DataSheet.co.kr
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 12. Gate charge waveform definitions
OC1005_2
Product data sheet
Rev. 02 — 10 December 2007
© NXP B.V. 2007. All rights reserved.
7 of 12
Datasheet pdf - http://www.DataSheet4U.net/
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부품번호 | 상세설명 및 기능 | 제조사 |
OC100 | Opto Coupler | VMI |
OC1005 | N-channel TrenchMOS standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |