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PDF 2SC4080 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4080 | |
| Descripción | PNP/NPN Epitaxial Planar Silicon Transistors | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number:EN3171
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1575/2SC4080
High-Frequency Amplifier,
Wide-Band Amplifier Applications
Features
· High fT.
· High breakdown voltage.
· Small reverse transfer capacitance and excellent
high-frequency characteristic.
· Adoption of FBET process.
Package Dimensions
unit:mm
2038
[2SA1575/2SC4080]
E : Emitter
C : Collector
B : Base
( ) : 2SA1575
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)150V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)10V, IC=(–)60mA
VCE=(–)30V, IC=(–)30mA
VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)30V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)100µA, IC=0
* : The 2SA1575/2SC4080 are classified by 10mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
Marking 2SA1575 : AF
2SC4080 : CI
hFE rank : C, D, E, F
SANYO : PCP
(Bottom view)
Ratings
(–)200
(–)200
(–)4
(–)100
(–)200
500
1.3
150
–55 to +150
Unit
V
V
V
mA
mA
mW
W
˚C
˚C
Ratings
min typ
40*
20
400
1.8
(2.3)
1.4
(1.7)
(–)200
(–)200
(–)4
max
(–)0.1
(–)1.0
320*
(–)1.0
(–)1.0
Unit
µA
µA
MHz
pF
pF
pF
pF
V
V
V
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72098HA (KT)/7139MO, TS No.3171-1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC4080.PDF ] | |
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