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PDF 2SC4116 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4116 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SC4116
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4116
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• High hFE: hFE = 70~700
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SA1586
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 150 mA
Base current
IB 30 mA
Collector power dissipation
PC 100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-70
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2E1A
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
Weight: 0.006 g (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
(Note)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 2 mA
VCE (sat)
fT
Cob
NF
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 1 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg = 10 kΩ,
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
70 ⎯ 700
⎯ 0.1 0.25 V
80 ⎯ ⎯ MHz
⎯ 2.0 3.5 pF
⎯ 1.0 10 dB
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700, ( ) marking symbol
Marking
1 2007-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC4116.PDF ] | |
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