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Datasheet WFW18N50N Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1WFW18N50NSilicon N-Channel MOSFET

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFW18N50N Silicon N-Channel MOSFET Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) Genera
Winsemi
Winsemi
mosfet


WFW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1WFW10N80N-Channel MOSFET

PROVISIONAL Wisdom Semiconductor WFW10N80 N-Channel MOSFET Features ■ ■ RDS(on) (Max 1.05 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● �
Wisdom technologies
Wisdom technologies
mosfet
2WFW11N90N-Channel MOSFET

Wisdom Semiconductor WFW11N90 Features ■ RDS(on) (Max 1.1 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advan
Wisdom technologies
Wisdom technologies
mosfet
3WFW13N50Silicon N-Channel MOSFET

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 13N5 0 WFW FW13N5 13N50 con N-Ch annel MOS FET Sili lic Cha OSF Features ■ 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Tem
Winsemi
Winsemi
mosfet
4WFW18N50Silicon N-Channel MOSFET

WFW18N50 Silicon N-Channel MOSFET Features „ „ „ „ „ 18A,500V,RDS(on)(Max0.265Ω)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description These N-Channel enhancement mode power field effect trans
WINSEMI SEMICONDUCTOR
WINSEMI SEMICONDUCTOR
mosfet
5WFW18N50NSilicon N-Channel MOSFET

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFW18N50N Silicon N-Channel MOSFET Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) Genera
Winsemi
Winsemi
mosfet
6WFW18N50WSilicon N-Channel MOSFET

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFW18N50W Silicon N-Channel MOSFET Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) Genera
Winsemi
Winsemi
mosfet
7WFW20N50N-Channel MOSFET

Wisdom Semiconductor WFW20N50 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.26 Ω )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● 1. Gate { ▲ ● ●
Wisdom
Wisdom
mosfet



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Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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