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PDF WFW18N50W Data sheet ( Hoja de datos )
| Número de pieza | WFW18N50W | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Features
■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 42nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
WFW18N50W
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology.this latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
AC-DC switching power supplies, DC-DC power Converters high
voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
PD Total Power Dissipation(@Tc=25℃)
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
18
12.7
80
±30
330
27.7
4.5
280
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 0.45 ℃/W
- 0.24 - ℃/W
- - 40 ℃/W
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
1 page  
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFW18N50W
Fig.12 Gate Test Circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
Steady, keep you advance
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WFW18N50W.PDF ] | |
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