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PDF WFW20N60W Data sheet ( Hoja de datos )
| Número de pieza | WFW20N60W | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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Datasheet pdf - http://www.DataSheet4U.net/
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Features
� 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V
� Ultra-low Gate charge(Typical 150nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFW20N60W
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for AC-DC switching
power supplies, DC-DC powerConverters high voltage H-bridge motor
drive PWM
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
PD Total Power Dissipation(@Tc=25℃)
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note1)
(Note3)
Value
600
20
15
80
±30
30
5.0
300
-55~150
300
Units
V
A
A
A
V
mJ
V/ ns
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
Thermal Resistance , Junction -to -Case
Value
Units
Min Typ Max
- - 0.25 ℃/W
Rev.A Mar.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet WFW20N60W.PDF ] | |
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