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PDF WFP70N06T Data sheet ( Hoja de datos )
| Número de pieza | WFP70N06T | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Features
� 68A,60V, RDS(on)(Max18mΩ)@VGS=10V
� Ultra-low Gate charge(Typical 20nC)
� Improved dv/dt capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(175℃)
WFP70N06T
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,DMOS technology.This latest technology has been especially
designed to minimize on-state resistance, have a low gate charge
with superior switching performance, and rugged avalanche
characteristics,DC-DC Converters and power management in
portable and,battery operated products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
Maximum Lead Temperature for soldering purpose,
TL
1/8 form Case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note3)
Value
60
68
51
280
±25
800
7.0
115
0.77
-55~175
300
Units
V
A
A
A
V
mJ
V/ ns
W
W/℃
℃
℃
Value
Min Typ Max
- - 1.3
- 0.5 -
- - 62.5
Units
℃/W
℃/W
℃/W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
1 page  
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFP70N06T
Fig.12 Gate Test circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
Steady, keep you advance
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WFP70N06T.PDF ] | |
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