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PDF RJP6065DPM Data sheet ( Hoja de datos )
| Número de pieza | RJP6065DPM | |
| Descripción | N-Channel IGBT | |
| Fabricantes | Renesas | |
| Logotipo |  |
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 1. - N-Ch, 630V, 40A, IGBT  Hay una vista previa y un enlace de descarga de RJP6065DPM (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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RJP6065DPM
Silicon N Channel IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)
Gate to emitter voltage rating 30 V
Pb-free lead plating and chip bonding
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
1
2
3
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Symbol
Collector to emitter voltage
VCES
Gate to emitter voltage
Collector current
Collector peak current
VGES
Ic Note1
ic(peak) Note1
Collector dissipation
Junction to case thermal impedance
PC
j-c
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area
Preliminary Datasheet
R07DS0204EJ0100
Rev.1.00
Nov 19, 2010
C
1. Gate
2. Collector
3. Emitter
E
Ratings
630
±30
40
100
50
2.5
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0204EJ0100 Rev.1.00
Nov 19, 2010
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
RJP6065DPM
Switching Characteristics (Typical) (1)
1000
tf
100 td(off)
td(on)
10 tr
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
1
1 10
100
Collector Current IC (A)
Switching Characteristics (Typical) (3)
1000
tf
tr
100 td(off)
td(on)
VCC = 300 V, VGE = 15 V
10 IC = 40 A, RL = 7.5 Ω
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
Switching Characteristics (Typical) (2)
1000
tf
tr
100 td(off)
td(on)
VCC = 300 V, VGE = 15 V
10 IC = 40 A, RL = 7.5 Ω, Ta = 25°C
1 10
100
Gate Resistance Rg (Ω)
www.DataSheet.co.kr
R07DS0204EJ0100 Rev.1.00
Nov 19, 2010
Page 5 of 7
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RJP6065DPM.PDF ] | |
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