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PDF CSD-8N Data sheet ( Hoja de datos )
| Número de pieza | CSD-8N | |
| Descripción | (CSD-8M/N) SCR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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CSD-8M
CSD-8N
8.0 AMP SCR
600 THRU 800 VOLTS
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSD-8M
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
MARKING CODE: FULL PART NUMBER
DPAK THYRISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=10ms)
I2t Value for Fusing (t=10ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Forward Gate Current (tp=10µs)
Peak Forward Gate Voltage (tp=10µs)
Peak Reverse Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
Storage Temperature
Junction Temperature
SYMBOL
VDRM, VRRM
IT(RMS)
ITSM
I2t
PGM
PG (AV)
IFGM
VFGM
VRGM
di/dt
Tstg
TJ
www.DataSheet.co.kr
CSD
-8M
CSD
-8N
600 800
8.0
80
32
40
1.0
4.0
16
5.0
50
-40 to +150
-40 to +125
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM, IRRM
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
Rated VDRM, VRRM
Rated VDRM, VRRM, TC=125°C
VD=12V, RL=10Ω
IT=100mA
VD=12V, RL=10Ω
ITM=16A, tp=380µs
VD=2/3 VDRM, TC=125°C
200
TYP
3.0
7.3
0.9
1.3
MAX
10
2.0
15
20
1.5
1.8
UNITS
V
A
A
A2s
W
W
A
V
V
A/µs
°C
°C
UNITS
µA
mA
mA
mA
V
V
V/µs
R0 (20-May 2004)
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CSD-8N.PDF ] | |
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