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16N03L 데이터시트 PDF




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부품번호 16N03L 기능
기능 RFD16N03L
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16N03L 데이터시트, 핀배열, 회로
SEMICONDUCTOR
RFD16N03L,
RFD16N03LSM
December 1995
16A, 30V, Avalanche Rated N-Channel Logic Level
Enhancement-Mode Power MOSFETs
Features
Packaging
• 16A, 30V
• rDS(ON) = 0.022
Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
JEDEC TO-252AA
DRAIN (FLANGE)
Description
The RFD16N03L and RFD16N03LSM are N-channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V - 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFD16N03L
TO-251AA 16N03L
RFD16N03LSM
TO-252AA 16N03L
Symbol
www.DataSheet.co.kr
GATE
SOURCE
DRAIN
GATE
SOURCE
NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N03LSM9A.
Formerly developmental type TA49030.
Absolute Maximum Ratings TC = +25oC
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
RFD16N03L,
RFD16N03LSM
30
30
±10
16
Refer to Peak Current Curve
Refer to UIS Curve
90
0.606
-55 to +175
260
UNITS
V
V
V
A
W
W/oC
oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
5-31
File Number 4013.1
Datasheet pdf - http://www.DataSheet4U.net/




16N03L pdf, 반도체, 판매, 대치품
RFD16N03L, RFD16N03LSM
Typical Performance Curves (Continued)
ID = 250µA
2.0 2.0
VGS = VDS, ID = 250µA
1.5 1.5
1.0 1.0
0.5 0.5
0.0
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 7. NORMALIZED DRAIN-SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
0.0
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
PULSE DURATION = 250µs, VGS = 5V, ID = 16A
2.0 100
1.5 75
1.0
0.5
50
www.DataSheet.co.kr
25
TJ = 25oC, PULSE DURATION = 250µs
ID = 32A
ID = 16A
ID = 8A
ID = 2A
0.0
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE
200
0
2.5 3.0 3.5 4.0 4.5 5.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 10. TYPICAL rDS(ON) FOR VARYING CONDITIONS OF
GATE VOLTAGE AND DRAIN CURRENT
VDD = 15V, IDD = 16A, RL = 0.93
250 tR
200
tF
150
tD(ON)
100
tD(OFF)
50
0
0 10 20 30 40 50
RGS, GATE-TO-SOURCE RESISTANCE ()
FIGURE 11. TYPICAL SWITCHING TIME AS A FUNCTION OF
GATE RESISTANCE
30
VDD = BVDSS
24
VDD = BVDSS
5
4
18 3
12
0.75
0.50
0.25
BBBVVVDDDSSSSSS
6 RIGL(R=EF1).8=705.6mA
VGS = 5V
0
IG(REF)
IG(REF)
20
IG(ACT)
t, TIME (s) 80
IG(ACT)
2
1
0
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
5-34
Datasheet pdf - http://www.DataSheet4U.net/

4페이지










16N03L 전자부품, 판매, 대치품
RFD16N03L, RFD16N03LSM
Temperature Compensated PSPICE Model for the RFD16N03L, RFD16N03LSM
.SUBCKT RFD16N03L 2 1 3; rev 12/12/94
CA 12 8 2.55e-9
CB 15 14 2.64e-9
CIN 6 8 1.45e-9
DPLCAP 5
10
DRAIN
LDRAIN
2
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 33.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
GATE
1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 3.4e-9
LSOURCE 3 7 3.4e-9
RSCL1
-
6
ESG 8
+
RSCL2
+ 51
5
51 ESCL
50
16
- VTO +
RDRAIN
EVTO
9 20 + 18 -
LGATE RGATE
8
6
21
MOS1
RIN CIN
8
DBREAK
11 +
EBREAK
17
18
-
MOS2
RSOURCE 7
DBODY
LSOURCE
3
SOURCE
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
S1A
12 13
8
S2A
14 15
13
RBREAK
17 18
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 0.14e-3
RGATE 9 20 0.89
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 10.31e-3
RVTO 18 19 RVTOMOD 1
S1B
S2B
13 CB
CA 14
++
EGS
6
8
-
EDS 5
8
-
www.DataSheet.co.kr
RVTO
19
IT -
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.583
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/176,6))}
.MODEL DBDMOD D (IS = 3.61e-13 RS = 5.06e-3 TRS1 = 3.05e-3 TRS2 = 7.57e-6 CJO = 2.16e-9 TT = 2.18e-8)
.MODEL DBKMOD D (RS = 1.66e-1 TRS1 = -2.97e-3 TRS2 = 7.57e-6)
.MODEL DPLCAPMOD D (CJO = 0.96e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 2.313 KP = 53.82 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 8.95e-4 TC2 = -1e-7)
.MODEL RDSMOD RES (TC1 = 3.92e-3 TC2 = 1.29e-5)
.MODEL RSCLMOD RES (TC1 = 2.03e-3 TC2 = 0.45e-5)
.MODEL RVTOMOD RES (TC1 = -2.27e-3 TC2 = -5.75e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.82 VOFF= -2.82)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.82 VOFF= -4.82)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.67 VOFF= 2.33)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.33 VOFF= -2.67)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
5-37
Datasheet pdf - http://www.DataSheet4U.net/

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16N03L

RFD16N03L

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