No Preview Available !
STP55NF06L
STB55NF06L - STB55NF06L-1
N-channel 60V - 0.014Ω - 55A TO-220/D2PAK/I2PAK
STripFET™ II Power MOSFET
General features
Type
STP55NF06L
STB55NF06L
STB55NF06L-1
VDSS
60V
60V
60V
RDS(on)
<0.018Ω
<0.018Ω
<0.018Ω
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
ID
55A
55A
55A
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
3
1
D2PAK
123
I2PAK
3
2
1
TO-220
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
STP55NF06L
STB55NF06LT4
STB55NF06L-1
November 2006
Marking
P55NF06L
B55NF06L
B55NF06L
Package
TO-220
D2PAK
I2PAK
Rev 4
Packaging
Tube
Tape & reel
Tube
1/15
www.st.com
15
STB55NF06L - STB55NF06L-1 - STP55NF06L
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=30 V, ID=27.5A,
RG=4.7Ω, VGS= 4.5V
(see Figure 12)
VDD=30V, ID=27.5A,
RG=4.7Ω, VGS=4.5V
(see Figure 12)
Min. Typ. Max. Unit
20 ns
100 ns
40 ns
20 ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 55A, VGS=0
ISD = 55A,
di/dt = 100A/µs,
VDD = 30V, Tj = 150°C
(see Figure 14)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
12 A
48 A
1.6 V
80 ns
200 nC
5A
5/15