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B31N20D PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 B31N20D
기능 IRFB31N20D
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B31N20D 데이터시트, 핀배열, 회로
SMPS MOSFET
PD- 93805B
IRFB31N20D
IRFS31N20D
IRFSL31N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.082
ID
31A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB31N20D
D2Pak
TO-262
IRFS31N20D IRFSL31N20D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
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Max.
31
21
124
3.1
200
1.3
± 30
2.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V Input Forward Converters
Notes  through ‡ are on page 11
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1
2/14/00
Datasheet pdf - http://www.DataSheet4U.net/




B31N20D pdf, 반도체, 판매, 대치품
IRFB/IRFS/IRFSL31N20D
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID = 18A
16
VDS = 160V
VDS = 100V
VDS = 40V
1000
100
Ciss
Coss
Crss
10
1
10 100
VDS, Drain-to-Source Voltage (V)
1000
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 20 40 60 80 100
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
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1000
100
TJ = 175° C
10
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.4 0.6 0.8 1.0
VSD ,Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1ms
TC = 25 °C
TJ = 175°C
Single Pulse
1
1
10
10ms
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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B31N20D 전자부품, 판매, 대치품
IRFB/IRFS/IRFSL31N20D
D.U.T
+
‚
-

RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
-
„
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
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D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-channel HEXFET® Power MOSFETs
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7
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