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부품번호 | K3055 기능 |
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기능 | MOSFET ( Transistor ) - 2SK3055 | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3055
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-State Resistance
RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A)
• Low Ciss : Ciss = 920 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3055
Isolated TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Gate to Source Voltage
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, −10
±30www.DataSheet.co.kr
±100
25
2.0
150
–55 to +150
15
22.5
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
5.0
62.5
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13094EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
©
1997,1999
Datasheet pdf - http://www.DataSheet4U.net/
2SK3055
1 000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 62.5 ˚C/W
10
Rth(ch-C) = 5.0 ˚C/W
1
0.1
0.01
10µ
100µ 1 m
10 m 100 m
1
PW - Pulse Width - s
TC = 25˚C
Single Pulse
10 100 1 000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS =10 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
75 Pulsed
10
TA = 125˚C
75˚C
25˚C
1.0 −25˚C
50
ID = 15 A
25
www.DataSheet.co.kr
0.1
0.1
1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
75 Pulsed
0 10 20
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
2.0 ID = 1 mA
50
VGS = 4.0 V
25 VGS = 10 V
0
0.1
10 100
ID - Drain Current - A
1000
1.5
1.0
0.5
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
4 Data Sheet D13094EJ1V0DS00
Datashe
4페이지 PACKAGE DRAWING (Unit : mm)
Isolated TO-220 (MP-45F)
10.0 ± 0.3
4.5 ± 0.2
φ 3.2 ± 0.2
2.7 ± 0.2
0.7 ± 0.1
2.54
1.3 ± 0.2
2.5 ± 0.1
1.5 ± 0.2 0.65 ± 0.1
2.54
123
1.Gate
2.Drain
3.Source
2SK3055
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Body
Diode
Gate
Protection
Diode Source (S)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protectionwww.DataSheet.co.kr circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D13094EJ1V0DS00
7
Datasheet pdf - http://www.DataSheet4U.net/
7페이지 | |||
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