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HMC1014 데이터시트 PDF




Hittite에서 제조한 전자 부품 HMC1014은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 HMC1014 기능
기능 GaAs pHEMPT MMIC
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HMC1014 데이터시트, 핀배열, 회로
v00.0312
Typical Applications
The HMC1014 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Functional Diagram
HMC1014
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Features
P1dB Output Power: +24.5 dBm
Psat Output Power: +27.5 dBm
High Gain: 21 dB
Output IP3: +35 dBm
Supply Voltage: Vdd = +6V @ 500 mA
50 Ohm Matched Input/Output
Die Size: 2.76 x 1.6 x 0.1 mm
General Description
The HMC1014 is a four stage GaAs pHEMT MMIC
Medium Power Amplifier die which operates between
33.5 and 46.5 GHz. The amplifier provides 21 dB of
gain, +27.5 dBm of saturated output power, and 27%
PAE from a +6V supply. With up to +35 dBm OIP3
the HMC1014 is ideal for high linearity applications in
miltary and space as well as point-to-point and point-
to-multi-point radios. The HMC1014 amplifier I/Os are
internallywww.DataSheet.net/ matched facilitating integration into mutli-
chip-modules (MCMs). All data shown herein was
measured with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd1 - Vdd8 = +6V, Idd = 500 mA [1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3) [2]
Total Supply Current
Min.
18
22
Typ.
33.5 - 43
21
0.029
25
18
24.5
27.5
35
500
Max.
Min.
18
21
Typ.
43 - 46.5
21
0.035
32
17
23.5
26.5
34
500
Max.
[1] Adjust Vgg between -2 to 0V to achieve Idd = 500 mA typical.
[2] Measurement taken at Pout / tone = +15 dBm.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/




HMC1014 pdf, 반도체, 판매, 대치품
v00.0312
Output IP3 vs. Supply Voltage,
Pout/tone = +15 dBm
43
39
35
31
5V
27
5.5V
6V
23
33 35 37 39 41 43 45 47
FREQUENCY (GHz)
HMC1014
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Output IM3 @ Vdd = +5V
60
50
40
30
34 GHz
36 GHz
20
38 GHz
40 GHz
42 GHz
10
44 GHz
46 GHz
0
10 12 14 16 18 20 22 24
Pout/TONE (dBm)
Output IM3 @ Vdd =+5.5V
60
50
40
30
34 GHz
36 GHz
20
38 GHz
40 GHz
42 GHz
10
44 GHz
46 GHz
0
10 12 14 16 18 20 22 24
Pout/TONE (dBm)
Output IM3 @ Vdd = +6V
60
50
40
www.DataSheet.net/
30
20
10
34 GHz
36 GHz
38 GHz
40 GHz
42 GHz
44 GHz
46 GHz
0
10 12 14 16 18 20 22 24
Pout/TONE (dBm)
Power Compression @ 34 GHz
30
25
20
15
Pout
Gain
10 PAE
5
0
-9 -6 -3 0 3 6
INPUT POWER (dBm)
9
12
Power Compression @ 40 GHz
30
25
20
15 Pout
Gain
PAE
10
5
0
-9 -6 -3 0 3 6
INPUT POWER (dBm)
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
Datasheet pdf - http://www.DataSheet4U.co.kr/

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HMC1014 전자부품, 판매, 대치품
Pin Descriptions
Pin Number
Function
1 RFIN
v00.0312
HMC1014
GaAs pHEMPT MMIC 0.5 Watt
POWER AMPLIFIER 33.5 - 46.5 GHz
Description
RF signal input. This pin is AC coupled and matched to 50
Ohms over the operating frequency range.
Interface Schematic
2, 12
Vgg1, Vgg2
Gate control for amplifier. Amplifier can be biased by either
Vgg1 or Vgg2. External bypass capacitors of 100 pF,
0.01uF, and 4.7 uF capacitors are required.
3, 4, 5, 6
7
8, 9, 10, 11
Vdd1-4
Drain bias voltage for the top half of the amplifier. External
bypass capacitors of 100 pF required for each pin, followed
by common 0.01uF and 4.7 uF Capacitors
RFOUT
RF signal output. This pad is AC coupled and matched to
50 Ohms over the operating frequency range.
Vdd5-8
Drain bias voltage for the bottom half of the amplifier.
External bypass capacitors of 100 pF required for each pin
followed by common 0.01 uF and 4.7 uF capacitors.
www.DataSheet.net/
Die Bottom
GND
Application Circuit
Die bottom must be connected to RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
7
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/

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