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HMC1015 데이터시트 PDF




Hittite에서 제조한 전자 부품 HMC1015은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 HMC1015 기능
기능 GaAs MMIC
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HMC1015 데이터시트, 핀배열, 회로
v00.0811
Typical Applications
The HMC1015 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
Test Equipment & Sensors
Military End-Use
Functional Diagram
HMC1015
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Features
Passive: No DC Bias Required
High Input IP3: 20 dBm
High LO/RF Isolation: 45 dB
High 2LO/IF Isolation: 50 dB
Wide IF Bandwidth: 16 - 22 GHz
Upconversion & Downconversion Applications
Die Size: 1.14 x 1.1 x 0.1 mm
General Description
The HMC1015 is a general purpose triple balanced
mixer chip that can be used as a frequency converter
with 16 to 22 GHz at the IF port and 26 to 32 GHz at
the RF port. This mixer requires no external
components or matching circuitry. The HMC1015
provides excellent LO/RF, LO/IF and 2LO/IF isolation
due to optimized balun structures. The mixer operates
with LO drive levels from +9 dBm to +15 dBm. The
HMC1015 wideband mixer exhibits consistent
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conversion gain and compression across its band-
width.
Electrical Specifications, TA = +25° C, LO = 9 GHz, LO = +13 dBm [2]
Parameter
Min. Typ. Max.
RF Frequency Range
IF Frequency Range
LO Frequency Range
Conversion Loss
LO to RF Isolation [1]
LO to IF Isolation [1]
2LO to IF Isolation [1]
RF to IF Isolation
IP3 (Input)
26 - 32
16- 22
7 - 11
10
45
31
50
35
22
13
1 dB Gain Compression (Input)
10
[1] Fixed IF = 17 GHz.
[2] Unless otherwise noted , all measurements performed as an upconverter with LO = 9 GHz.
Units
GHz
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/




HMC1015 pdf, 반도체, 판매, 대치품
v00.0811
HMC1015
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
RF and IF Return Loss
0
-5
-10
-15
-20
-25
-30
15
RF
IF
19 23 27
FREQUENCY (GHz)
31
35
LO Return Loss
0
-10
-20
-30
-40
6
9 dBm
11 dBm
13 dBm
15 dBm
8 10 12 14
FREQUENCY (GHz)
16
Isolation LO/IF, LO/RF, 2LO/IF
-10
-20
-30 LO/IF
-40
LO/RF
-50
-60
2LO/IF
-70
-80
-90
6
7 8 9 10
LO FREQUENCY (GHz)
11
12
Isolation RF/IF
-10
-20
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-30
-40
RF/IF
-50
-60
24 25 26 27 28 29 30 31 32 33 34
RF FREQUENCY (GHz)
Input P1dB vs. Temperature @ LO= 9 GHz
14
12
10
8
+25C
+85C
6 -40C
4
2
24 25 26 27 28 29 30 31 32 33 34
RF FREQUENCY (GHz)
Input P1dB vs. LO Power @ LO= 9 GHz
14
12
10
8
6 +9 dBm
+11 dBm
+13 dBm
4 +15 dBm
2
24 25 26 27 28 29 30 31 32 33 34
RF FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
Datasheet pdf - http://www.DataSheet4U.co.kr/

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HMC1015 전자부품, 판매, 대치품
v00.0811
HMC1015
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.076mm
(0.003”)
Wire Bond
RF Ground Plane
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
0.076mm
(0.003”)
Wire Bond
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
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ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
7
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/

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