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PDF TQP7M9104 Data sheet ( Hoja de datos )
| Número de pieza | TQP7M9104 | |
| Descripción | 2W High Linearity Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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TQP7M9104
2W High Linearity Amplifier
Applications
Repeaters
BTS Transceivers
BTS High Power Amplifiers
CDMA / WCDMA / LTE
General Purpose Wireless
Product Features
700-4000 MHz
+32.8 dBm P1dB
+49.5 dBm Output IP3
15.8 dB Gain @ 2140 MHz
+5V Single Supply, 435 mA Collector Current
Internal RF overdrive protection
Internal DC overvoltage protection
• Internal Active Bias
On chip ESD protection
Shut-down Capability
Capable of handling 10:1 VSWR @ 5Vcc, 2.14 GHz,
32.8 dBm CW Pout or 23.5 dBm WCDMA Pout
24-pin QFN 4x4mm SMT Package
Functional Block Diagram
Vbias 1
GND/NC 2
GND/NC 3
RFin 4
RFin 5
GND/NC 6
18 Iref
17 GND/NC
16 RFout/Vcc
15 RFout/Vcc
14 RFout/Vcc
13 GND/NC
General Description
The TQP7M9104 is a high linearity driver amplifier in
industry standard, RoHS compliant, QFN surface mount
package. This InGaP/GaAs HBT delivers high
performance across 700-4000 MHz range of frequencies
with 15.8 dB Gain, +49.5 dBm OIP3 and +32.5 dBm
P1dB at 2.14 GHz while only consuming 435 mA
quiescent collector current. All devices are 100% RF and
DC tested.
The TQP7M9104 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier integrates an on-chip DC over-voltage and RF
over-drive protection. This protects the amplifier from
electrical DC voltage surges and high input RF input
power levels that may occur in a system.
The TQP7M9104 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device is an
excellent candidate for transceiver line cards and high
power amplifiers in current and next generation multi-
carrier 3G / 4G base stations.
Pin Configurationwww.DataSheet.net/
Pin #
Symbol
1 Vbias
2, 3, 6, 7, 8, 9, 10, 11,
12,13, 17, 19, 20, 21, 22, GND / NC
23, 24
4, 5 RFin
14, 15, 16
RFout/Vcc
18 Iref
Ordering Information
Part No.
TQP7M9104
Description
2 W High Linearity Amplifier
TQP7M9104-PCB900 TQP7M9104 920-960MHz EVB
TQP7M9104-PCB2140 TQP7M9104 2.11-2.17GHz EVB
Standard T/R size =2500 pieces on a 13” reel.
Data Sheet: Rev E 05/21/12
© 2012 TriQuint Semiconductor, Inc.
- 1 of 13-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
TQP7M9104
2W High Linearity Amplifier
Application Circuit 920-960 MHz (TQP7M9104-PCB900)
Notes:
1. See PC Board Layout under Application Information section for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistor may be replaced with copper trace in the target application layout.
4. Iref can be used as device power down current by placing R7 at location R8.
5. The recommended component values are dependent upon the frequency of operation.
6. All components are of 0603 size unless stated on the schematic.
7. R1 is critical for device linearity performance.
8. Critical component placement locations:
Distance between center of C8 and TQP7M9104 (U1) device package is 190 mil.
Distance between center of L5 and TQP7M9104 (U1) device package is 452 mil.
Distance between center of C2 and TQP7M9104 (U1) device package is 305 mil.
Distance between center of C9 and TQP7M9104 (U1) device package is 275 mil.
www.DataSheet.net/
Data Sheet: Rev E 05/21/12
© 2012 TriQuint Semiconductor, Inc.
- 5 of 13-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
TQP7M9104
2W High Linearity Amplifier
Pin Configuration and Description
Vbias 1
GND/NC 2
GND/NC 3
RFin 4
RFin 5
GND/NC 6
18 Iref
17 GND/NC
16 RFout/Vcc
15 RFout/Vcc
14 RFout/Vcc
13 GND/NC
Pin
1
2, 3, 6,7, 8, 9, 10, 11,
12, 13,17, 19, 20, 21,
22, 23, 24
4, 5
14, 15, 16
18
Backside paddle
Symbol
Vbias
GND/NC
RFin
RFout / Vcc
Iref
RF/DC GND
Description
Voltage supply for active bias for the amp. Connect to same supply voltage as Vcc.
No internal connection. This pin can be grounded or N/C on PCB. Land pads should be
provided for PCB mounting integrity.
RF Input. DC voltage present, blocking capacitor required. Requires external match for
optimal performance.
RF Output. DC Voltage present, blocking cap required. Requires external match for optimal
performance.
Reference current into internal active bias current mirror. Current into Iref sets device
quiescent current. Also, can be used as on/off control.
Multiple Vias should be employedwww.DataSheet.net/ to minimize inductance and thermal resistance. Use
recommended via pattern shown under mounting configuration and ensure good solder
attach for optimum thermal and electrical performance
Applications Information
PC Board Layout
PCB Material (stackup):
1 oz. Cu top layer
0.014 inch Nelco N4000-13, εr=3.7
1 oz. Cu middle layer 1
Core Nelco N4000-13
1 oz. Cu middle layer 2
0.014 inch Nelco N-4000-13
1 oz. Cu bottom layer
Finished board thickness is 0.062±.006
50 ohm line dimensions: width = .028”
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB land
pattern has been developed to accommodate lead and package
tolerances. Since surface mount processes vary from supplier
to supplier, careful process development is recommended.
Data Sheet: Rev E 05/21/12
© 2012 TriQuint Semiconductor, Inc.
- 11 of 13-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TQP7M9104.PDF ] | |
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