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T1G4005528-FS 데이터시트 PDF




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부품번호 T1G4005528-FS 기능
기능 GaN RF Power Transistor
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T1G4005528-FS 데이터시트, 핀배열, 회로
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Applications
Military radar
Civilian radar
Professional and military radio
communications
Test instrumentation
Avionics
• Wideband or narrowband amplifiers
Product Features
• Frequency: DC to 3.5 GHz
• Linear Gain: >15 dB at 3.5 GHz
• Operating Voltage: 28 V
Output Power (P3dB): 55 W at 3.5 GHz
Lead-free and RoHS compliant
Functional Block Diagram
1
1.524
www.DataSheet.net/
General Description
The TriQuint T1G4005528-FS is a 55 W (P3dB)
discrete GaN on SiC HEMT which operates from
DC to 3.5 GHz. The device is constructed with
TriQuint’s proven 0.25 µm production process,
which features advanced field plate techniques
to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management
costs.
5.4261
Pin Configurations
Pin #
Symbol
1 RF Output
2  RF Input 9.652
Flange
Source
3.505
+.000
-.203
Ordering Information
Material No. Part No.
1078974
T1G4005528-
FS
1079752  T1G4005528-
FS-EVB1
Description
Packaged part:
Flangeless
3.0-3.5 GHz
Eval Brd
ECCN
EAR99
EAR99
Datasheet: Rev D 8/10/2011
© 2011 TriQuint Semiconductor, Inc.
–1–
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/




T1G4005528-FS pdf, 반도체, 판매, 대치품
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Device Characterization Data
S-Parameter Smith Chart
T1G4005528-FS
VDS = 28V, IDQ = 200 mA
j5
j2.5 j10
j1 4000 MHz
j25
0
S11
1
2.5
5 10 100 M2H5z
S22
−j1
−j25
100 MHz
−j2.5
www.DataSheet.net/
−j5
−j10
Small-Signal Gain
MaxiMmauximmuSmVtDaVSSbdt=aslbe2=l8e2GV8G,aVIaiD,niQnId=qoo2f=f0T2T0101G0mGm4A04A0050552582−F8S-FS
40
35
30
25
20
15
100 500 1000 1500 2000 2500 3000 3500 4000
Freq. [MHz]
Datasheet: Rev D 8/10/2011
© 2011 TriQuint Semiconductor, Inc.
–4–
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/

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T1G4005528-FS 전자부품, 판매, 대치품
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Typical Performance: Gain, Efficiency and Output Power
Performance is measured at DUT reference plane
F2r6eTqFr1T.e=G1q.G14=004100000005M055MH52Hz28;z8;-VFVDDSSFS=S=G22G88aViVan,,iInIDDDQQD=E=Ef22f00f,f00.ammanAnAd;dP; PuPPlsAuAelEs:E1e0:vv01ssµ0..0sPP, μ2oo0s%u,u2tt07%0
25 ZS = 0.78 + j0.94
ZL = 3.73 + j0.92
24
60
50
23 40
22 30
Gain
21
DEff.
PAE
20
2036 38 40 42 44 46 48 5010
Pout [dBm]
F2r1eTqFT1.re=G1q.G24=040020000005M055MH52zH28;z8-;VFVDDSSFS=S=G22G8a8ViaVn,,iInIDDDQQD=E=Ef22ff00,f00.amamnAnAd;d;PPPuPlAusAelEs:Ee10:vv01ssµ0..s0,PP2μoo0s%u,u2tt08%0
20 ZS = 0.90 − j2.75
19 ZL = 2.70 + j1.37
70
60
18 50
17 40
16
Gain
30
DEff.
15 PAE 20
1436 38 40 42 44 46 48 5010
Pout [dBm]
T1G4005528-FS Gain DEff, and PAE vs. Pout
Freq. = 3000 MHz;GVaDiSn,=D2E8ffV.,, aIDnQd=PA2E00vsm. PAo;uPt ulse: 100 μs, 20%
Freq. = 3000 MHz; Vds = 28 V, Idq = 200 mA; Pulse: 100 us, 20%
20 80
19 ZS = 3.59 − j5.46
18 ZL = 3.25 − j0.90
70
60
17 50
16 40
15 30
14
Gain
DEff.
20
13 PAE 10
1232 34 36 38 40 42 44 46 48 500
Pout [dBm]
T1G4005528-FS Gain DEff, and PAE vs. Pout
Freq. = 3500 MHz; GVaDiSn,=D2E8fVf., aIDnQd=PA20E0vsm. APo;uPt ulse: 100 μs, 20%
Freq. = 3500 MHz; Vds = 28 V, Idq = 200 mA; Pulse: 100 us, 20%
20www.DataSheet.net/
80
19 ZS = 6.96 − j3.92
ZL = 3.23 − j1.90
18
70
60
17 50
16 40
15 30
14
Gain
DEff.
20
13 PAE 10
1232 34 36 38 40 42 44 46 48 500
Pout [dBm]
Datasheet: Rev D 8/10/2011
© 2011 TriQuint Semiconductor, Inc.
–7–
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/

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부품번호상세설명 및 기능제조사
T1G4005528-FS

GaN RF Power Transistor

TriQuint Semiconductor
TriQuint Semiconductor

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