Datasheet TQP3M9019 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	TQP3M9019	High Linearity LNA Gain Block TQP3M9019 High Linearity LNA Gain Block Applications     Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE General purpose Wireless 16-pin 3x3 QFN package Product Features          20-4000 MHz 22 dB Gain @ 1900 MHz 1.3 dB Noise Figure @ 1900 MHz +39.	TriQuint Semiconductor	data

TQP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	TQP0102	GaN Power Transistor Applications • Small Cell Base Station • Microcell Base Station Driver • Active Antenna • General Purpose Applications TQP0102 5 W, DC to 4 GHz, GaN Power Transistor N/C N/C N/C N/C N/C N/C N/C N/C Product Features • Operating Frequency Range: DC to 4 GHz • Output Power (PSAT): 5 W �	TriQuint Semiconductor	transistor
2	TQP0103	GaN Power Transistor Applications  W-CDMA / LTE  Macrocell Base Station Driver  Microcell Base Station  Small Cell  Active Antenna  General Purpose Applications Product Features  Operating Frequency Range: DC to 4 GHz  Output Power (PSAT): 15 W  Drain Efficiency: 64%  Linear Gain: 19 dB 	TriQuint Semiconductor	transistor
3	TQP0104	GaN Power Transistor Applications • W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Applications Product Features • Operating Frequency Range: DC to 4 GHz • Output Power (PSAT): 30 W • Drain Efficiency: 64% • Linear Gai	TriQuint Semiconductor	transistor
4	TQP13-N	0.13 um D pHEMT Foundry Service Production Process 0.13 um D pHEMT Foundry Service Features 0.13 um pHEMT (TQP13-N) Process Cross-section • • • • • • Low cost Optical Lithography 0.13um Gate High Ft, ~95 GHz TQP13-N Low Noise, < 0.5 dB in Ku-band Interconnects: 2 layers (1 Airbridge & 1 local) High Value MIM Capacit	TriQuint Semiconductor	data
5	TQP15	0.15 um D-mode pHEMT Foundry Service TQP15 0.15 um D-mode pHEMT Foundry Service Process Cross Section Diagram Updated Process Diagram Passivation Nitride Features • D-Mode, -1.0 V Vp • InGaAs Active Layer pHEMT Process • 0.15 µm Low Cost Optical Lithography Gates • High Density Interconnects: • 1 Global • 1 Local • High	TriQuint Semiconductor	data
6	TQP200002	ESD Protection Circuit TQP200002 ESD Protection Device Applications     Cellular Handsets Cordless Phone LNBs CATV set top boxes Product Features         Snap-Back ESD protection Low clamp voltages 15 or 30 V Low trigger voltages 18, 25, or 41 V Two bidirectional protection lines Fast	TriQuint Semiconductor	data
7	TQP2420B	ISM Band InGaP HBT Power Amplifier TQP2420B PRELIMINARY DATASHEET WLAN PRODUCTS Vcc1 12 N/C 11 N/C 10 9 RF In 1 RF Out / Vc2 2.4GHz ISM Band InGaP HBT Power Amplifier N/C 2 8 RF Out / Vc2 Vref 3 4 Bias Controller Features 7 6 Vdet 5 High-Efficiency, 2.4 GHz ISM Band PA for 802.11b WLAN Systems Integrated Output Power	TriQuint Semiconductor	amplifier

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Número de pieza	Descripción	Fabricantes	PDF
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