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T1G6000528-Q3 데이터시트 PDF




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부품번호 T1G6000528-Q3 기능
기능 GaN RF Power Transistor
제조업체 TriQuint Semiconductor
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T1G6000528-Q3 데이터시트, 핀배열, 회로
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Applications
• Wideband and narrowband defense and
commercial communication systems
–– General Purpose RF Power
–– Jammers
–– Radar
–– Professional radio systems
–– WiMAX
–– Wideband amplifiers
–– Test instrumentation
–– Cellular infrastructure
Available Package
Product Features
• Frequency: DC to 6 GHz
• Linear Gain: >10 dB at 6 GHz
• Operating Voltage: 28 V
• Output Power (P3dB): >7 W at 6 GHz
• Lead-free and RoHS compliant
• Low thermal resistance package
Package Information
Package Type
Description
Q3 5.0mm x 4.0mm ceramic air
cavity straight lead package
Base
CuMo
www.DataSheet.net/
General Description
The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 6 GHz
and typically provides >10 dB gain at 6 GHz. The
device is constructed with TriQuint’s proven 0.25
µm production process, which features advanced
field plate techniques to optimize power and effi-
ciency at high drain bias operating conditions. This
optimization can potentially lower system costs in
terms of fewer amplifier line-ups and lower thermal
management costs.
Ordering Information
Material No.
Part No.
1075579
T1G6000528-Q3
1081733
T1G6000528-Q3-
EVB3
Description
Packaged part
Narrowband
3.0 to 3.5 GHz
evaluation
board
ECCN
EAR99
EAR99
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
–1–
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/




T1G6000528-Q3 pdf, 반도체, 판매, 대치품
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Electrical Specifications
Recommended operating conditions apply unless otherwise specified: TA=25 °C
DC Characteristics
Characteristics
Break-Down Voltage Drain Source
Gate Quiescent Voltage
Gate Threshold Voltage
Saturated Drain Current
Symbol Min Typ Max Unit
Conditions
BVDSX 85 120
VGS (Q)
-3.9
VGS (th)
-4.5
IDSX 2
V VGS= -8 V; ID=1 mA
V VDS=28 V; IDQ=100 mA
V VDS=10 V; ID=5 mA
A VDS=5 V; VGS=0 V
RF Characteristics
Characteristics
Symbol Min Typ Max
Load Pull Performance at 6.0 GHz (VDS = 28 V, IDQ = 50 mA, CW)
Linear Gain
GLIN 13.0 13.5
Output Power at 3 dB Gain Compression
P3dB 8.0 10.0
Drain Efficiency at 3 dB Gain Compression
DE3dB 55 65
Power-Added Efficiency at 3 dB Gain Compression
PAE3dB
50
55
Gain at 3 dB Compression
G3dB 10.0 10.5
www.DataSheet.net/
Performance at 3.3 GHz in the 3.0 to 3.5 GHz Fixture (VDS = 28 V, IDQ = 50 mA, 200msec pulse, 20% duty-cycle)
Linear Gain
GLIN 15.5
Output Power at 3 dB Gain Compression
P3dB 8.9
Drain Efficiency at 3 dB Gain Compression
DE3dB
55
Power-Added Efficiency at 3 dB Gain Compression
PAE3dB
50
Gain at 3 dB Compression
G3dB 12.5
Narrowband Performance at 3.5 GHz (VDS = 28 V, IDQ = 50 mA, CW at P1dB, applied for 3.5 secs)
16.9
11.0
58
53
13.9
Impedance Mismatch Ruggedness
VSWR
10:1
Unit
dB
W
%
%
dB
dB
W
%
%
dB
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
–4–
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/

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T1G6000528-Q3 전자부품, 판매, 대치품
T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Device Characterization Data
Load-Pull Data
Test conditions: VDD= 28 V, IDQ = 50 mA, Test signal = CW
j12.5
j25
j50
j5
0
−j5
500 MHz
j125
ZLeff
ZLcmp
500 MHz
5 12.5
25
500
500
MMHHzz50
125
6000 MHz ZLpwr
6000 MHz
6000 MHz
www.DataSheet.net/
−j125
−j12.5
ZS 6000 MHz
−j25
−j50
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
–7–
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/

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부품번호상세설명 및 기능제조사
T1G6000528-Q3

GaN RF Power Transistor

TriQuint Semiconductor
TriQuint Semiconductor

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