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Datasheet VEC3R0305QG Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | VEC3R0305QG | 3V SERIES - Lead terminal 3V SERIES - Lead terminal
FEATURES
- Rated 3.0V - High power density and ultra low ESR - High reliability at the same condition (compared with 2.7V)
Drawing
SPECIFICATION
ITEM Rated Voltage (VR) Operating Temperature Capacitance Tolerance
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CHARACTERISTICS 3.0 V -40 ~ +65℃ -10 |  Vina | data |
VEC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | VEC2301 | General-Purpose Switching Device Applications Ordering number : ENN7647
VEC2301
P-Channel Silicon MOSFET
VEC2301
General-Purpose Switching Device Applications
Preliminary Features
• • • •
Package Dimensions
unit : mm 2227
[VEC2301]
Top View 0.25 0.3 0.15 Bottom View 0.07
•
Best suited for load switches. Low ON  Sanyo Semicon Device data | | |
| 2 | VEC2302 | VEC2302 VEC2302
VEC2302
µ
µ µ Ω Ω
VEC2302
8
0.25
7
6
5
0.3
0.15
8
7
6 5
0.25
1
2
2.9
3
0.65
4
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1
1 2 3 4
2.8
2.3
Top view
0.75
1 : Source1 2 : G Sanyo Semicon Device data | | |
| 3 | VEC2303 | VEC2303 VEC2303
VEC2303
µ
µ µ Ω Ω Ω
VEC2303
8
0.25
7
6
5
0.3
0.15
8
7
6 5
0.25
1
2
2.9
3
0.65
4
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1
1 2 3 4
2.8
2.3
Top view
0.75
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain Sanyo Semicon Device data | | |
| 4 | VEC2305 | General Purpose Switching Devide Applications
Ordering number : ENN7718
VEC2305
VEC2305
Features
• • •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
For load switches, DC / DC converters. 1.8V drive. Composite type with 2 P-Channel MOSFETs (MCH3319) contained in a singlepackage, facilitain Sanyo Semicon Device data | | |
| 5 | VEC2307 | P-Channel Silicon MOSFET General-Purpose Switching Device Ordering number : ENA0113
VEC2307
VEC2307
Features
• • • •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
The best suited for load switches. 4V drive. Composite type, facilitaing high-density mounting. Mount height 0.75mm.
Specifications
Abso Sanyo Semicon Device mosfet | | |
| 6 | VEC2315 | Power MOSFET, Transistor VEC2315
Power MOSFET –60V, 137mΩ, –2.5A, Dual P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on res  ON Semiconductor mosfet | | |
| 7 | VEC2402 | N-Channel Silicon MOSFET www.DataSheet.co.kr
Ordering number : ENN8027
VEC2402
N-Channel Silicon MOSFET
VEC2402
Features
• • • • •
General-Purpose Switching Device Applications
The best suited for inverter applications. Low ON-resistance. Composite type facilitating high-density mounting. 4V drive. Mounting Sanyo Semicon Device mosfet | |
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