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부품번호 | CGH40035F 기능 |
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기능 | RF Power GaN HEMT | ||
제조업체 | CREE | ||
로고 | |||
전체 13 페이지수
CGH40035F
35 W, RF Power GaN HEMT
Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40035F, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40035F ideal for linear
and compressed amplifier circuits. The transistor is available in a
screw-down, flange package.
PackagPeNT:yCpGe:H4404003159F3
FEATURES
APPLICATIONS
• Up to 4 GHz Operation
• 15 dB Small Signal Gain at 2.0 GHz
• 13 dB Small Signal Gain at 4.0 GHz
• 45 W typical PSAT
• 60 % Efficiency at PSAT
• 28 V Operation
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentationwww.DataSheet.net/
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
www.cree.com/wireless
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
Typical Performance
Swept CW Data of CGH40035 vs. Output Power with Source
and
Load
Impedances Optimized
VDD = 28 V, IDQ = 500
mfoAr ,PFSrATeqPo=w3e.r5inGHCzGH40035-TB
16 80%
14 70%
12 Gain
10 Gain
Drain Efficiency
8 PAE
6
4 PAE
60%
50%
40%
30%
20%
2
Efficiency
10%
0 0%
22 24 26 28 30 32 34 36 38 40 42 44 46 48
Output Power (dBm)
www.DataSheet.net/
Simulated Maximum Available Gain and K Factor of the CGH40035F
VDD = 28 V, IDQ = 500 mA
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
4 CGH40035 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Datasheet pdf - http://www.DataSheet4U.co.kr/
4페이지 CGH40035F-TB Demonstration Amplifier Circuit Schematic
CGH40035F-TB Demonstration Amplifier Circuit Outline
www.DataSheet.net/
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
7 CGH40035 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Datasheet pdf - http://www.DataSheet4U.co.kr/
7페이지 | |||
구 성 | 총 13 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CGH40035F | RF Power GaN HEMT | CREE |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |