RJH60D5DPM Datasheet PDF - Renesas
| Part Number | RJH60D5DPM | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | Renesas | |
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There is a preview and RJH60D5DPM download ( pdf file ) link at the bottom of this page. Total 10 Pages | ||
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Preliminary Datasheet
RJH60D5DPM
600V - 37A - IGBT
Application: Inverter
R07DS0174EJ0200
Rev.2.00
Apr 19, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 40 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
1
2
3
1. Gate
G 2. Collector
3. Emitter
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
75
37
150
30
120
45
2.78
3.95
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0174EJ0200 Rev.2.00
Apr 19, 2012
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
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RJH60D5DPM
Switching Characteristics (Typical) (1)
1000
tf
100 td(off)
td(on)
10 tr
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
1 10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
td(off)
100
tr
td(on)
tf
VCC = 300 V, VGE = 15 V
IC = 37 A, Tc = 25°C
10
1 10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 300 V, VGE = 15 V
IC = 37 A, Rg = 5 Ω
td(off)
100
td(on)
tr tf
10
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
100
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
10
1
0.1
0.01
1
Eoff
Eon
10 100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
VCC = 300 V, VGE = 15 V
IC = 37 A, Tc = 150°C
1
Eon
Eoff
www.DataSheet.net/
0.1
1
10 100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
VCC = 300 V, VGE = 15 V
IC = 37 A, Rg = 5 Ω
1 Eon
Eoff
0.1
25
50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS0174EJ0200 Rev.2.00
Apr 19, 2012
Page 5 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RJH60D5DPM electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RJH60D5DPM.PDF Datasheet ] | |
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