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부품번호 | RJH60D6DPM 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Renesas | ||
로고 | |||
전체 10 페이지수
Preliminary Datasheet
RJH60D6DPM
600V - 40A - IGBT
Application: Inverter
R07DS0175EJ0300
Rev.3.00
Apr 19, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
1
2
3
1. Gate
G 2. Collector
3. Emitter
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E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
80
40
160
30
120
50
2.5
3.95
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0175EJ0300 Rev.3.00
Apr 19, 2012
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH60D6DPM
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
IC = 40 A
80 A
3
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 150°C
Pulse Test
4
IC = 40 A
80 A
3
22
1
4 8 12 16 20
Gate to Emitter Voltage VGE (V)
1
4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Typical Transfer Characteristics
160
Tc = 25°C
120 150°C
80
40
VCE = 10 V
Pulse Test
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
2.4
VGE = 15 V
2.2 Pulse Test
IC = 80 A
2.0
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1.8
1.6
1.4
40 A
20 A
1.2
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
6 IC = 10 mA
4
1 mA
2
VCE = 10 V
Pulse Test
0
−25 0 25
50
75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
12
10
0
Collector current wave
8 (Square wave)
6
Tj = 125°C
4 Tc = 90°C
VCE = 400 V
2 VGE = 15 V
Rg = 5 Ω
duty = 50%
0
1 10
100
Frequency f (kHz)
1000
R07DS0175EJ0300 Rev.3.00
Apr 19, 2012
Page 4 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
4페이지 RJH60D6DPM
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01 01.0s1hot pulse
100 μ
1m
θj – c(t) = γs (t) • θj – c
θj – c = 2.5°C/W, Tc = 25°C
PDM
PW
T
10 m
100 m
1
Pulse Width PW (s)
D=
PW
T
10 100
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.05
0.1 0.02
0.01
1 shot pulse
0.01
100 μ
1m
θj – c(t) = γs (t) • θj – c
θj – c = 3.95°C/W, Tc = 25°C
10 m
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PDM
100 m
PW
T
1
D=
PW
T
10 100
Pulse Width PW (s)
R07DS0175EJ0300 Rev.3.00
Apr 19, 2012
Page 7 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
7페이지 | |||
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