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PDF RJH60D7ADPK Data sheet ( Hoja de datos )
| Número de pieza | RJH60D7ADPK | |
| Descripción | IGBT | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Preliminary Datasheet
RJH60D7ADPK
600V - 50A - IGBT
Application: Inverter
R07DS0547EJ0200
Rev.2.00
Apr 19, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
G
www.DataSheet.net/
E
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
90
50
200
50
200
300
0.42
1.07
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0547EJ0200 Rev.2.00
Apr 19, 2012
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
RJH60D7ADPK
Switching Characteristics (Typical) (1)
1000
td(off)
100 tf
td(on)
10 tr
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
1 10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
10000
VCC = 300 V, VGE = 15 V
IC = 50 A, Tc = 150°C
1000
100
10
1
td(off)
tf
td(on)
tr
10 100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 300 V, VGE = 15 V
IC = 50 A, Rg = 5 Ω
td(off)
100
tf td(on)
tr
10
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
100
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
10
1 Eon
Eoff
0.1
0.01
1
10 100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
VCC = 300 V, VGE = 15 V
IC = 50 A, Tc = 150°C
Eon
1
Eoff
www.DataSheet.net/
0.1
1
10 100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
VCC = 300 V, VGE = 15 V
IC = 50 A, Rg = 5 Ω
Eon
1
Eoff
0.1
25
50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS0547EJ0200 Rev.2.00
Apr 19, 2012
Page 5 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
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