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부품번호 | RJH60V1BDPE 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Renesas | ||
로고 | |||
전체 10 페이지수
Preliminary Datasheet
RJH60V1BDPE
600 V - 8 A - IGBT
Application: Inverter
R07DS0743EJ0200
Rev.2.00
May 25, 2011
Features
Short circuit withstand time (6 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (25 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
C
123
1. Gate
G
2. Collector
3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iD(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
16
8
32
8
32
52
2.38
1.75
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
RJH60V1BDPE
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
3
IC = 16 A
2
8A
1
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Typical Transfer Characteristics
40
VCE = 10 V
Pulse Test
30
Tc = 25°C
20 150°C
10
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8 IC = 10 mA
6
1 mA
4
2
VCE = 10 V
Pulse Test
0
−25 0 25
50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 150°C
Pulse Test
4
3
IC = 16 A
2 8A
1
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
4.0
VGE = 15 V
3.5 Pulse Test
3.0
IC = 16 A
2.5
www.DataSheet.net/
2.0
1.5
8A
1.0
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
8
6
0
Collector current wave
(Square wave)
4
2
Tj = 125°C, Tc = 90°C
VCE = 400 V, VGE = 15 V
Rg = 5 Ω, duty = 50%
0
1 10 100
Frequency f (kHz)
1000
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 4 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
4페이지 RJH60V1BDPE
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
D=1
1
0.5
0.2
0.1
0.05
0.1 0.02
0.01
1 shot pulse
0.01
100 μ
1m
θj – c(t) = γs (t) • θj – c
θj – c = 2.38°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10 m
100 m
1
Pulse Width PW (s)
10 100
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
3
Tc = 25°C
D=1
1
0.5
0.2
0.3 0.1
0.05
0.02
0.01
1 shot pulse
0.1
100 μ
1m
θj – c(t) = γs (t) • θj – c
θj – c = 1.75°C/W, Tc = 25°C
www.DataSheet.net/
PDM
PW
T
D=
PW
T
10 m 100 m
1
Pulse Width PW (s)
10 100
R07DS0743EJ0200 Rev.2.00
May 25, 2011
Page 7 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
RJH60V1BDPE | IGBT ( Insulated Gate Bipolar Transistor ) | Renesas |
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