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PDF RJH6086BDPK Data sheet ( Hoja de datos )
| Número de pieza | RJH6086BDPK | |
| Descripción | High Speed Power Switching | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RJH6086BDPK (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Preliminary Datasheet
RJH6086BDPK
600 V - 45 A - IGBT
High Speed Power Switching
R07DS0470EJ0100
Rev.1.00
Sep 28, 2011
Features
Ultra high speed switching
tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load)
Low on-state voltage
Fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12
3
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
www.DataSheet.net/
Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES
VGES
IC
ic(peak) Note1
IDF(peak) Note2
PC
j-c
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width limited by maximum junction temperature.
Ratings
600
±30
45
90
90
198.4
0.63
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
/W
°C
°C
R07DS0470EJ0100 Rev.1.00
Sep 28, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
RJH6086BDPK
Switching Characteristics (Typical) (1)
1000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tj = 25°C
tr includes the diode recovery
100 td(off)
tf
td(on)
tr
10
1 10 100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
VCC = 300 V, VGE = 15 V
IC = 45 A, Tj = 25°C
tr includes the diode recovery
100
tr
td(off)
tf
td(on)
10
1 10 100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 300 V, VGE = 15 V
IC = 45 A, Rg = 5 Ω
tr includes the diode recovery
tr
100
tf
td(off) td(on)
10
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10000
1000
100
Eoff
Eon
10
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tj = 25°C
Eon includes the diode recovery
1
1 10
Collector Current IC (A)
(Inductive load)
100
Switching Characteristics (Typical) (4)
10000
1000
Eoff
Eon
VCC = 300 V, VGE = 15 V
www.DataSheet.net/
IC = 45 A, Tj = 25°C
Eon includes the diode recovery
100
1 10 100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10000
VCC = 300 V, VGE = 15 V
IC = 45 A, Rg = 5 Ω
Eon includes the diode recovery
1000 Eoff
Eon
100
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0470EJ0100 Rev.1.00
Sep 28, 2011
Page 5 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RJH6086BDPK.PDF ] | |
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