(PDF) RJH65S04DPQ-A0 Datasheet

Número de pieza	RJH65S04DPQ-A0
Descripción	IGBT
Fabricantes	Renesas
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No Preview Available ! Preliminary Datasheet RJH65S04DPQ-A0 650V - 50A - IGBT Application: Inverter R07DS0849EJ0001 Rev.0.01 Jul 06, 2012 Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Tj = 125C, inductive load) Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 123 Absolute Maximum Ratings Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector to emitter diode Tc = 25°C forward current Tc = 100°C Collector dissipation Junction temperature Storage temperature Notes: 1. Value at Tc = 25C 1. Gate 2. Collector G 3. Emitter 4. Collector www.DataSheet.net/ E Symbol VCES / VR VGES IC IC IDF IDF PC Note1 Tj Tstg Ratings 650 ±30 100 50 100 50 378 150 –55 to +150 (Ta = 25°C) Unit V V A A A A W °C °C R07DS0849EJ0001 Rev.0.01 Jul 06, 2012 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page

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