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PDF 2N5555 Data sheet ( Hoja de datos )
| Número de pieza | 2N5555 | |
| Descripción | JFET Switching | |
| Fabricantes | ON Semiconductor | |
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ON Semiconductort
JFET Switching
N–Channel — Depletion
3
GATE
1 DRAIN
2N5555
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Forward Gate Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VDG
VGS
IGF
PD
TJ
Tstg
Value
25
25
25
10
350
2.8
–65 to +150
–65 to +150
2 SOURCE
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0)
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V)
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V, TA = 100°C)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
Drain–Source On–Voltage
(ID = 7.0 mAdc, VGS = 0)
Static Drain–Source On Resistance
(ID = 0.1 mAdc, VGS = 0)
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.
SMALL–SIGNAL CHARACTERISTICS
Small–Signal Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Rise Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
Symbol
V(BR)GSS
IGSS
ID(off)
IDSS
VGS(f)
VDS(on)
rDS(on)
rds(on)
Ciss
Crss
td(on)
tr
td(off)
tf
1
2
3
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
Min Max Unit
25 — Vdc
— 1.0 nAdc
— 10 nAdc
— 2.0 µAdc
15 — mAdc
— 1.0 Vdc
— 1.5 Vdc
— 150 Ohms
— 150 Ohms
— 5.0 pF
— 1.2 pF
— 5.0 ns
— 5.0 ns
— 15 ns
— 10 ns
© Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 3
1
Publication Order Number:
2N5555/D
1 page  
2N5555
COMMON GATE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20° 10°
0° 350° 340°
330°
30°
20° 10°
0° 350° 340°
330°
40° 0.7 320° 40° 0.04 320°
100 200 300 ID = 0.25 IDSS
0.6 400
0.03
50°
60°
70°
100
0.5
200
300
400
500
600
700
500
ID = IDSS
0.4
600
800
900
310°
300°
290°
50°
60°
70°
0.02
0.01
310°
300°
290°
700
80° 0.3 800 280° 80° 0.0 280°
90°
900 270° 90°
100
270°
500
100°
260°
100°
600
ID = IDSS
600 ID = 0.25 IDSS
260°
110°
250° 110°
700 700 0.01
250°
800
120°
240° 120°
800
240°
0.02
900
130° 230° 130° 230°
900 0.03
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 14. S11g
30°
20° 10°
0° 350° 340°
330°
40° 0.5 320°
100
0.4
50°
100
ID = IDSS
310°
0.3
60° 300°
70°
0.2 ID = 0.25 IDSS
290°
80° 280°
0.1 900
90° 270°
900
100° 260°
110° 250°
120° 240°
140° 0.04 220°
150° 160° 170° 180° 190° 200° 210°
Figure 15. S12g
30°
20° 10°
0° 350° 340°
330°
1.5 300
40°
1.0 200
100
500
400
600
700
320°
0.9 800 900
50°
ID = IDSS, 0.25 IDSS
310°
0.8
60° 300°
70° 0.7 290°
80° 280°
0.6
90° 270°
100° 260°
110° 250°
120° 240°
130° 230° 130° 230°
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 16. S21g
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 17. S22g
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