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2N5565 데이터시트 PDF




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부품번호 2N5565 기능
기능 Matched N-Channel JFET Pairs
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2N5565 데이터시트, 핀배열, 회로
2N5564/5565/5566
Vishay Siliconix
Matched N-Channel JFET Pairs
PRODUCT SUMMARY
Part Number
2N5564
2N5565
2N5566
VGS(off) (V)
–0.5 to –3
–0.5 to –3
–0.5 to –3
V(BR)GSS Min (V)
–40
–40
–40
gfs Min (mS)
7.5
7.5
7.5
IG Typ (pA)
–3
–3
–3
jVGS1 – VGS2j Max (mV)
5
10
20
FEATURES
D Two-Chip Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 3 pA
D Low Noise: 12 nV⁄√Hz @ 10 Hz
D Good CMRR: 76 dB
D Minimum Parasitics
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signals
D Maximum High Frequency Performance
APPLICATIONS
D Wideband Differential Amps
D High-Speed,
Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
D Matched Switches
DESCRIPTION
The 2N5564/5565/5566 are matched pairs of JFETs mounted
in a TO-71 package. This two-chip design reduces parasitics
for good performance at high frequency while ensuring
extremely tight matching. This series features high
breakdown voltage (V(BR)DSS typically > 55 V), high gain
(typically > 9 mS), and <5 mV offset between the two die.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information).
For similar products see the low-noise U/SST401 series, and
the low-leakage 2N5196/5197/5198/5199 data sheets.
TO-71
S1
1
D1 2
G2
6
5 D2
3
G1
4
Top View
S2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 V
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "80 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Document Number: 70254
S-04031—Rev. D, 04-Jun-01
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 325 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW
Notes
a. Derate 2.6 mW/_C above 25_C
b. Derate 5.2 mW/_C above 25_C
www.vishay.com
8-1




2N5565 pdf, 반도체, 판매, 대치품
2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
14
VGS(off) = 1.5 V
12
VGS = 0 V
0.1 V
10
Transfer Characteristics
40
VGS(off) = 2 V
VDS = 15 V
32
8
0.2 V
24 TA = 55_C
0.3 V
25_C
6
0.4 V
16
4 0.5 V
0.6 V
2
0.7 V
0
0 4 8 12 16 20
VDS Drain-Source Voltage (V)
8
125_C
0
0
0.4
0.8
1.2
1.6
VGS Gate-Source Voltage (V)
2
Output Characteristics
5
VGS = 0 V
VGS(off) = 1.5 V
0.1 V
0.2 V
4 0.3 V
0.4 V
3
0.5 V
2 0.6 V
0.7 V
1 0.8 V
0
0
0.9 V
0.2 0.4 0.6 0.8
VDS Drain-Source Voltage (V)
1
Capacitance vs. Gate-Source Voltage
30
f = 1 MHz
VDS = 0 V
24
18
12
6
0
0
Ciss
Crss
4 8 12 16
VGS Gate-Source Voltage (V)
20
10 nA
1 nA
Gate Leakage Current
IGSS @ 25_C
TA = 125_C
ID = 10 mA
100 pA
1 mA
1 mA
10 pA
1 pA
0.1 pA
0
TA = 25_C
10 mA
IGSS @ 25_C
IG(on) @ ID
6 12 18 24
VDG Drain-Gate Voltage (V)
30
Common-Gate Input Admittance
100
VDG = 15 V
ID = 10 mA
TA = 25_C
gig
big
10
1
0.1
100
200 500
f Frequency (MHz)
1000
www.vishay.com
8-4
Document Number: 70254
S-04031Rev. D, 04-Jun-01

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Matched N-Channel JFET Pairs

Vishay Siliconix
Vishay Siliconix

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